C, H, N and O in Si and Characterization and Simulation of Materials and Processes : Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 /

Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial l...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores Corporativos: Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors Strasbourg, France, Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes
Otros Autores: Borghesi, A.
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Oxford : Elsevier Science, 1996.
Colección:European Materials Research Society symposia proceedings.
Temas:
Semiconductors > Congresses.
Silicon > Congresses.
Semiconductors > Defects > Congresses.
Semi-conducteurs > Congr�es.
Silicium > Congr�es.
Semi-conducteurs > D�efauts > Congr�es.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
Semiconductors
Semiconductors > Defects
Silicon
Congress
proceedings (reports)
Conference papers and proceedings
Conference papers and proceedings.
Actes de congr�es.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover; C, H, N and O in Si and Characterization and Simulation of Materials and Processes; Copyright Page; Part I: Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Other Element Semiconductors; Table of Contents; Preface; Organizers and sponsors; Chapter 1. Light impurities and their interactions in silicon; Abstract; 1. Introduction; 2. Isolated light impurities; 3. Oxygen aggregation for T> 500 &#xFFFD;C; 4. Oxygen aggregation for T <500 &#xFFFD;C; 5. Conclusions; Acknowledgment; References.
  • Chapter 2. Activation energies for the formation of oxygen clusters related to the thermal donors in siliconAbstract; 1. Introduction; 2. Experimental procedure; 3. Experimental results; 4. Discussion and conclusions; Acknowledgements; References; Chapter 3. Determination of the criteria for nucleation of ring-OSF from small as-grown oxygen precipitates in CZ-Si crystals; Abstract; 1. Introduction; 2. Experimental; 3. Results and discussion; 4. Conclusions; Acknowledgments; References; Chapter 4. Simulation of oxygen precipitation in CZ-Si crystal during the pulling process; Abstract.
  • 1. Introduction2. Experiment; 3. Model; 4. Result and discussion; 5. Conclusion; References; chapter 5. Etherogeneous precipitation in oxygen-implanted silicon; Abstract; 1. Introduction; 2. Etherogeneous precipitation; 3. Discussion; References; Chapter 6. Stress-induced oxygen precipitation in Cz-Si; Abstract; 1. Introduction; 2. Experimental procedure; 3. Results; 4. Discussion; Acknowledgments; References; Chapter 7. Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals; Abstract; 1. Introduction; 2. Experimental details; 3. Results; 4. Discussion.
  • 5. ConclusionsAcknowledgement; References; Chapter 8. Influence of hydrogen and oxygen on the melt properties and the crystal growth in silicon; Abstract; 1. Introduction; 2. Experimental; 3. Results and discussion; 4. Summary; References; Chapter 9. Oxygen distribution in Czochralski silicon melts measured by an electrochemical oxygen sensor; Abstract; 1. Introduction; 2. Principle and mode of operation of an oxygen sensor; 3. Experiments; 4. Results and discussion; 5. Conclusions; Acknowledgements; References.
  • Chapter 10. Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafersAbstract; 1. Introduction; 2. Experimental; 3. Results and discussion; 4. Conclusion; Acknowledgments; References; Chapter 11. Non-doping light impurities in silicon for solar cells; Abstract; 1. Introduction; 2. Oxygen in silicon; 3. Carbon in silicon; 4. Hydrogen in silicon; 5. Nitrogen in silicon; 6. Mutual interaction between impurities; References; Chapter 12. Influence of carbon and oxygen on phosphorus and aluminium co-gettering in silicon solar cells; Abstract; 1. Introduction.

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