Cargando…
C, H, N and O in Si and Characterization and Simulation of Materials and Processes : Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 /
Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial l...
| Clasificación: | Libro Electrónico |
|---|---|
| Autores Corporativos: | , |
| Otros Autores: | |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Oxford :
Elsevier Science,
1996.
|
| Colección: | European Materials Research Society symposia proceedings.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000Mi 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn829460381 | ||
| 003 | OCoLC | ||
| 005 | 20231117044835.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 130309s1996 enk o 100 0 eng d | ||
| 040 | |a EBLCP |b eng |e pn |c EBLCP |d OCLCO |d OPELS |d N$T |d OCLCF |d UKDOC |d OCLCQ |d OCLCO |d OCLCQ |d YDXCP |d DEBSZ |d OCLCO |d OCLCQ |d OCLCO |d OCL |d OCLCO |d OCLCQ |d LEAUB |d OCLCQ |d COM |d OCLCO |d OCLCQ |d OCLCO | ||
| 020 | |a 9780444596338 |q (electronic bk.) | ||
| 020 | |a 044459633X |q (electronic bk.) | ||
| 035 | |a (OCoLC)829460381 | ||
| 050 | 4 | |a TK7871.99 .C65 | |
| 072 | 7 | |a TEC |x 008090 |2 bisacsh | |
| 072 | 7 | |a TEC |x 008100 |2 bisacsh | |
| 082 | 0 | 4 | |a 621.38152011 |
| 111 | 2 | |a Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors |d (1995 : |c Strasbourg, France) | |
| 245 | 1 | 0 | |a C, H, N and O in Si and Characterization and Simulation of Materials and Processes : |b Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 / |c edited by A. Borghesi [and others]. |
| 260 | |a Oxford : |b Elsevier Science, |c 1996. | ||
| 300 | |a 1 online resource (580 pages) | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a European Materials Research Society Symposia Proceedings | |
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; C, H, N and O in Si and Characterization and Simulation of Materials and Processes; Copyright Page; Part I: Symposium N on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and Other Element Semiconductors; Table of Contents; Preface; Organizers and sponsors; Chapter 1. Light impurities and their interactions in silicon; Abstract; 1. Introduction; 2. Isolated light impurities; 3. Oxygen aggregation for T> 500 �C; 4. Oxygen aggregation for T <500 �C; 5. Conclusions; Acknowledgment; References. | |
| 505 | 8 | |a Chapter 2. Activation energies for the formation of oxygen clusters related to the thermal donors in siliconAbstract; 1. Introduction; 2. Experimental procedure; 3. Experimental results; 4. Discussion and conclusions; Acknowledgements; References; Chapter 3. Determination of the criteria for nucleation of ring-OSF from small as-grown oxygen precipitates in CZ-Si crystals; Abstract; 1. Introduction; 2. Experimental; 3. Results and discussion; 4. Conclusions; Acknowledgments; References; Chapter 4. Simulation of oxygen precipitation in CZ-Si crystal during the pulling process; Abstract. | |
| 505 | 8 | |a 1. Introduction2. Experiment; 3. Model; 4. Result and discussion; 5. Conclusion; References; chapter 5. Etherogeneous precipitation in oxygen-implanted silicon; Abstract; 1. Introduction; 2. Etherogeneous precipitation; 3. Discussion; References; Chapter 6. Stress-induced oxygen precipitation in Cz-Si; Abstract; 1. Introduction; 2. Experimental procedure; 3. Results; 4. Discussion; Acknowledgments; References; Chapter 7. Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals; Abstract; 1. Introduction; 2. Experimental details; 3. Results; 4. Discussion. | |
| 505 | 8 | |a 5. ConclusionsAcknowledgement; References; Chapter 8. Influence of hydrogen and oxygen on the melt properties and the crystal growth in silicon; Abstract; 1. Introduction; 2. Experimental; 3. Results and discussion; 4. Summary; References; Chapter 9. Oxygen distribution in Czochralski silicon melts measured by an electrochemical oxygen sensor; Abstract; 1. Introduction; 2. Principle and mode of operation of an oxygen sensor; 3. Experiments; 4. Results and discussion; 5. Conclusions; Acknowledgements; References. | |
| 505 | 8 | |a Chapter 10. Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafersAbstract; 1. Introduction; 2. Experimental; 3. Results and discussion; 4. Conclusion; Acknowledgments; References; Chapter 11. Non-doping light impurities in silicon for solar cells; Abstract; 1. Introduction; 2. Oxygen in silicon; 3. Carbon in silicon; 4. Hydrogen in silicon; 5. Nitrogen in silicon; 6. Mutual interaction between impurities; References; Chapter 12. Influence of carbon and oxygen on phosphorus and aluminium co-gettering in silicon solar cells; Abstract; 1. Introduction. | |
| 500 | |a 2. Experimental procedure. | ||
| 520 | |a Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which. | ||
| 650 | 0 | |a Semiconductors |v Congresses. | |
| 650 | 0 | |a Silicon |v Congresses. | |
| 650 | 0 | |a Semiconductors |x Defects |v Congresses. | |
| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0318258 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 6 | |a Silicium |0 (CaQQLa)201-0052755 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0318262 |x D�efauts |0 (CaQQLa)201-0318262 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 650 | 7 | |a Semiconductors |x Defects |2 fast |0 (OCoLC)fst01112211 | |
| 650 | 7 | |a Silicon |2 fast |0 (OCoLC)fst01118631 | |
| 655 | 2 | |a Congress |0 (DNLM)D016423 | |
| 655 | 7 | |a proceedings (reports) |2 aat |0 (CStmoGRI)aatgf300027316 | |
| 655 | 7 | |a Conference papers and proceedings |2 fast |0 (OCoLC)fst01423772 | |
| 655 | 7 | |a Conference papers and proceedings. |2 lcgft | |
| 655 | 7 | |a Actes de congr�es. |2 rvmgf |0 (CaQQLa)RVMGF-000001049 | |
| 700 | 1 | |a Borghesi, A. | |
| 711 | 2 | |a Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes |d (1995 : |c Strasbourg, France) | |
| 776 | 0 | 8 | |i Print version: |a Borghesi, A. |t C, H, N and O in Si and Characterization and Simulation of Materials and Processes : Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995. |d Oxford : Elsevier Science, �1996 |z 9780444824134 |
| 830 | 0 | |a European Materials Research Society symposia proceedings. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780444824134 |z Texto completo |