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C, H, N and O in Si and Characterization and Simulation of Materials and Processes : Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 /

Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial l...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores Corporativos: Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors Strasbourg, France, Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes
Otros Autores: Borghesi, A.
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Oxford : Elsevier Science, 1996.
Colección:European Materials Research Society symposia proceedings.
Temas:
Acceso en línea:Texto completo
Descripción
Sumario:Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which.
Notas:2. Experimental procedure.
Descripción Física:1 online resource (580 pages)
ISBN:9780444596338
044459633X