Selected Topics in Group IV and II-VI Semiconductors : Proceedings of Symposium L and Symposium D of the 1995 E-Mrs Spring Conference, Strasbourg, France, 22-26 May 1995 /

This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the prob...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Symposium on Silicon Molecular Beam Epitaxy Strasbourg, France
Otros Autores: Kasper, E.
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Oxford : Elsevier Science, 1996.
Colección:European Materials Research Society symposia proceedings.
Temas:
Molecular beam epitaxy > Congresses.
Silicon crystals > Congresses.
Compound semiconductors > Congresses.
Semiconductor doping > Congresses.
Semiconductors > Defects > Congresses.
�Epitaxie par jets mol�eculaires > Congr�es.
Silicium cristallis�e > Congr�es.
Compos�es semi-conducteurs > Congr�es.
Semi-conducteurs > Dopage > Congr�es.
Semi-conducteurs > D�efauts > Congr�es.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
Compound semiconductors.
Molecular beam epitaxy.
Semiconductor doping.
Semiconductors > Defects.
Silicon crystals.
Congress
Conference papers and proceedings.
Actes de congr�es.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover; Selected Topics in Group IV and II-VI Semiconductors; Copyright Page; PART I: Symposium L: 6th International Symposium on Silicon Molecular Beam Epitaxy; SIXTH INTERNATIONAL SYMPOSIUM ON SILICON MOLECULAR BEAM EPITAXY; Table of Contents; Preface; SECTION I: OPTICAL PROPERTIES; Chapter 1. Quantitative analysis of light emission from SiGe quantum wells; Abstract; 1. Introduction; 2. Experimental procedure; 3. Results and discussion; 4. Conclusions; Acknowledgements; References.
  • Chapter 2. Optimisation and stability of optical spectra of novel Si ... Ge quantum well structures in an external electric fieldAbstract; 1. Introduction; 2. Field induced absorption spectra of Si-Ge short period superlattices; 3. Si-Ge double quantum well emitters; References; Chapter 3. Room-temperature luminescence from Si/Ge single quantum well diodes grown by molecular beam epitaxy; Abstract; 1. Introduction; 3. MBE growth and diode fabrication; 4. Measurement of electroluminescence and photocurrent; 5. Conclusion; Acknowledgements; References.
  • Chapter 4. The growth and characterization of Si1-xGex multiple quantum wells on Si(110) and Si(111)Abstract; 1. Introduction; 2. Experimental procedure; 3. Results; 4. Summary; Acknowledgements; References; Chapter 5. Intense photoluminescence from Si-based quantum well structures with neighboring confinement structure; Abstract; 1. Introduction; 2. Experiment; 3. Results and discussion; 4. Conclusions; Acknowledgements; References.
  • Chapter 6. Influence of surfactants on molecular beam epitaxial grown SiGe single quantum wells studied by photoluminescence and secondary ion mass spectroscopy investigationsAbstract; 1. Introduction; 2. Experimental procedure; 3. Results and discussion; 4. Summary; References; Chapter 7. Anomalous spectral shift of photoluminescence from MBE-grown strained Si1-xGex/Si quantum wells mediated by atomic hydrogen; Abstract; 1. Introduction; 2. Experimental procedure; 3. Results and discussion; Acknowledgements; References.
  • Chapter 8. Field-driven blue shift of excitonic photoluminescence in Si-Ge quantum wells and superlatticesAbstract; 1. Introduction; 2. Experimental procedure; 3. Experimental results and discussion; 4. Conclusion; Acknowledgements; References; SECTION II: SUPERLATTICES; Chapter 9. Theory of electronic and optical properties of Si/Ge superlattices; 1. Introduction; 2. The method; 3. Results; 4. Conclusions; Acknowledgements; References; Chapter 10. Interface morphology and relaxation in high temperature grown Si1-xGex/Si superlattices; Abstract; 1. Introduction; 2. Experimental details.

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