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In-situ characterization of thin film growth /
Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an impo...
| Clasificación: | Libro Electrónico |
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| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Cambridge ; Philadelphia, PA :
Woodhead Pub.,
2011.
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| Colección: | Woodhead Publishing in materials.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Cover; In situcharacterization ofthin film growth; Copyright; Contents; Contributor contact details; Part I Electron diffraction techniques for studying thin film growth in situ; 1 Reflection high-energy electron diffraction (RHEED) for in situ characterization of thin film growth; 1.1 Reflection high-energy electron diffraction (RHEED) and pulsed laser deposition (PLD); 1.2 Basic principles of RHEED; 1.3 Analysis of typical RHEED patterns: the influence of surface disorder; 1.4 Crystal growth: kinetics vs thermodynamics; 1.5 Variations of the specular intensity during deposition.
- 1.6 Kinetical growth modes and the intensity response in RHEED1.7 RHEED intensity variations and Monte Carlo simulations; 1.8 Conclusions; 1.9 Acknowledgements; 1.10 References; 2 Inelastic scattering techniques for in situ characterization of thin film growth: backscatter Kikuchi diffraction; 2.1 Introduction; 2.2 Kikuchi patterns; 2.3 Kikuchi lines in reflection high-energy electron diffraction (RHEED) images; 2.4 Dual-screen RHEED and Kikuchi pattern collection; 2.5 Lattice parameter determination; 2.6 Epitaxial film strain determination; 2.7 Kinematic and dynamic scattering.
- 2.8 Epitaxial film structure determination2.9 Conclusion; 2.10 References; Part II Photoemission techniques for studying thin film growth in situ; 3 Ultraviolet photoemission spectroscopy (UPS) for in situ characterization of thin film growth; 3.1 Introduction; 3.2 Principles of ultraviolet photoemission spectroscopy (UPS); 3.3 Applications of UPS to thin film systems; 3.4 Future trends; 3.5 References; 4 X-ray photoelectron spectroscopy (XPS) for in situ characterization of thin film growth; 4.1 Introduction; 4.2 In situ monitoring of thin film growth.
- 4.3 Measuring the reaction of thin films with gases using ambient pressure X-ray photoelectron spectroscopy (XPS)4.4 In situ measurements of buried interfaces using high kinetic energy XPS (HAXPES); 4.5 Conclusions; 4.6 Acknowledgments; 4.7 References; 5 In situ spectroscopic ellipsometry (SE) for characterization of thin film growth; 5.1 Introduction; 5.2 Principles of ellipsometry; 5.3 In situ spectroscopic ellipsometry (SE) characterization; 5.4 In situ considerations; 5.5 Further In situ SE examples; 5.6 Conclusions; 5.7 Sources of further information and advice; 5.8 Acknowledgments.
- 5.9 ReferencesPart III Alternative in situ characterization techniques; 6 In situ ion beam surface characterization of thin multicomponent films; 6.1 Introduction; 6.2 Background to ion backscattering spectrometry and time-of-flight (TOF) ion scattering and recoil methods; 6.3 Experimental set-ups; 6.4 Studies of film growth processes relevant to multicomponent oxides; 6.5 Conclusions; 6.6 Acknowledgments; 6.7 References; 7 Spectroscopies combined with reflection high-energy electron diffraction (RHEED) for real-time in situ surface monitoring of thin film growth; 7.1 Introduction.