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Impurity doping processes in silicon /
This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many te...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
[Place of publication not identified] :
North Holland,
1981.
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| Colección: | Materials processing, theory and practices ;
v. 2. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Impurity Doping Processes in Silicon; Copyright Page; Introduction to the series; Preface to volume 2; Advisory board; Table of Contents; Chapter 1. Double-diffusion processes in silicon; 1. Introduction; 2. Interactions between dopants during double diffusion; 3. Effects observed in practical double diffused structures in silicon; 4. Assessment of current position in modelling double diffusion processes; 5. General perspective; References; Chapter 2. Ion implantation processes in silicon; 1. Introduction; 2. Ion distribution; 3. Ion masking techniques; 4. Electrical activation
- 5. Ion implantation production equipment6. Impurity concentration profile model with non-constant carrier mobility; References; Chapter 3. Source feed materials in ion beam technology; 1. Introduction; 2. Ion sources; 3. Source feed materials; 4. Experimentally tested starting materials; References; Chapter 4. Growth of doped silicon layers by molecular beam epitaxy; 1. Introduction; 2. Vacuum quality; 3. MBE apparatus; 4. Growth of undoped MBE layers; 5. Growth of doped layers; 6. Preliminary device applications; 7. Conclusions; References; Chapter 5. Neutron transmutation doping of silicon
- 1. Theory and history2. Process control requirements; 3. Radiological considerations; 4. Outline of idealized NTD procedure; 5. Electrical and structural characteristics of NTD silicon; 6. Applications of NTD material and processes to device manufacture; 7. Radiation facilities and their suitability for processing NTD silicon; 8. Principal areas of current research in NTD silicon; References; Chapter 6. CVD doping of silicon; 1. Introduction; 2. Epitaxial deposition equipment; 3. Reactant Gases; 4. Thermochemistry; 5. Kinetics; 6. Upper and lower doping limits; 7. Autodoping; Acknowledgements
- 4. Comparison of experimental techniques and theoretical predictionsReferences; Subject index