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Surface properties of electronic materials /
The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam ; New York :
Elsevier Scientific Pub. Co.,
1988.
|
| Colección: | Chemical physics of solid surfaces and heterogeneous catalysis ;
v. 5. |
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 050 | 4 | |a QD506 |b .C44 vol. 5 | |
| 072 | 7 | |a SCI |x 013050 |2 bisacsh | |
| 082 | 0 | 4 | |a 541.3453 |
| 245 | 0 | 0 | |a Surface properties of electronic materials / |c edited by D.A. King and D.P. Woodruff. |
| 260 | |a Amsterdam ; |a New York : |b Elsevier Scientific Pub. Co., |c 1988. | ||
| 300 | |a 1 online resource (474 pages) : |b illustrations. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a The chemical physics of solid surfaces and heterogeneous catalysis ; |v v. 5 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Surface Properties of Electronic Materials; Copyright Page; Preface; Table of Contents; Chapter 1. Surface science and electronic materials. An overview; 1. Introduction; 2. Semiconductor surfaces and interfaces; 3. Metal-semiconductor interfaces; 4. Semiconductor-semiconductor interfaces; References; Chapter 2. Structural and electronic properties of elemental semiconductors and surfaces; 1. Introduction; 2. Bonding and electronic states in bulk silicon; 3. The atomic geometry of the Si(100) (2 X 1) surface; 4. The atomic geometry of the cleaved Si (111 ) (2 X 1) surface | |
| 505 | 8 | |a 5. The atomic geometry of the equilibrium Si(111) (7 X 7) surface6. The ""new"" reconstructions; Acknowledgements; References; Chapter 3. Atomic geometry and electronic structure of tetrahedrally coordinated compound semiconductor interfaces; 1. Introduction; 2. Zincblende(110); 3. Adsorbate structures on zincblende(110); 4. Polar surfaces of zincblende structure materials; 5. Wurtzite structure materials. ZnO; 6. Synopsis; Acknowledgements; References; Chapter 4. Adsorption and Schottky barrier formation on compound semiconductor surfaces; 1. Introduction; 2. Gas-phase adsorption | |
| 505 | 8 | |a 3. Semiconductor adsorption on semiconductor substrates. Heterojunction interfaces4. Adsorption of metals. Schottky barrier formation; Acknowledgements; References; Chapter 5. Adsorption on elemental semiconductors; 1. Introduction; 2. Preparation of clean surfaces; 3. Intrinsic structure of Si surfaces; 4. Intrinsic structure of Ge surfaces; 5. Adsorption on Si; 6. Adsorption on Ge; 7. Summary; Acknowledgements; References; Chapter 6. Adsorption and reaction of metals on elemental semiconductors; 1. Introduction; 2. Structural evidence for the reaction at room temperature | |
| 505 | 8 | |a 3. The electronic states of silicides4. The interface reaction as seen with electronic state spectroscopy; 5. A scheme for interface growth at room temperature; 6. Selected topics connected with the scheme of interface growth; References; Chapter 7. Molecular beam epitaxy of III-V compounds. Aspects of growth kinetics and dynamics; 1. Introduction; 2. The GaAs(001) surface; 3. Thermodynamic and kinetic factors involved in the MBE process; 4. Growth dynamics; Acknowledgements; References; Chapter 8. Molecular beam epitaxy of silicon and related materials; 1. Introduction | |
| 505 | 8 | |a 2. Molecular beam epitaxy3. The technology of MBE; 4. Substrate preparation; 5. Crystallographic perfection; 6. Evaluation of undoped homoepitaxial silicon; 7. Doping; 8. Silicides; 9. Silicon-on-insulator structures; 10. The Six Ge1-x system; 11. Device applications; 12. Future prospects; Acknowledgements; References; Chapter 9. Molecular beam epitaxy of insulators, metastable phases and II-VI compounds; 1. Introduction; 2. Factors controlling the range of materials accessible to MBE growth techniques; 3. MBE growth and properties of epitaxial insulators | |
| 520 | |a The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Surface chemistry. | |
| 650 | 0 | |a Surfaces (Physics) | |
| 650 | 0 | |a Electronics |x Materials |x Surfaces. | |
| 650 | 6 | |a Chimie des surfaces. |0 (CaQQLa)201-0000376 | |
| 650 | 6 | |a Surfaces (Physique) |0 (CaQQLa)201-0050017 | |
| 650 | 6 | |a �Electronique |0 (CaQQLa)201-0016374 |x Mat�eriaux |0 (CaQQLa)201-0016374 |x Surfaces. |0 (CaQQLa)201-0375383 | |
| 650 | 7 | |a SCIENCE |x Chemistry |x Physical & Theoretical. |2 bisacsh | |
| 650 | 7 | |a Electronics |x Materials |x Surfaces |2 fast |0 (OCoLC)fst00907570 | |
| 650 | 7 | |a Surface chemistry |2 fast |0 (OCoLC)fst01139210 | |
| 650 | 7 | |a Surfaces (Physics) |2 fast |0 (OCoLC)fst01139265 | |
| 650 | 7 | |a Chimie des surfaces. |2 ram | |
| 650 | 7 | |a �Electronique |x Mat�eriaux |x Surfaces. |2 ram | |
| 700 | 1 | |a King, D. A. |q (David Anthony), |d 1939- | |
| 700 | 1 | |a Woodruff, D. P. | |
| 776 | 0 | 8 | |i Print version: |t Surface properties of electronic materials. |d Amsterdam ; New York : Elsevier Scientific Pub. Co., 1988 |z 9780444427823 |w (OCoLC)18666548 |
| 830 | 0 | |a Chemical physics of solid surfaces and heterogeneous catalysis ; |v v. 5. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780444427823 |z Texto completo |