Cargando…
Advances in Semiconductor Lasers /
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing n...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam :
Elsevier,
2012.
|
| Edición: | First edition. |
| Colección: | Semiconductors and semimetals ;
v. 86. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Advances in Semiconductor Lasers; Copyright; Contents; List of Contributors; Preface; Chapter 1: High-Power Slab-Coupled Optical Waveguide Lasers and Amplifiers; 1 Introduction; 2 Slab-Coupled Optical Waveguide Concept and Initial Laser Demonstration; 3 GaAs-Based SCOW Devices; 3.1 InGaAs/AlGaAs/GaAs SCOWLs; 3.2 Reliability; 3.3 InGaAs/AlGaAs/GaAs SCOW amplifiers; 3.4 Mode-locked GaAs-based SCOWLs; 3.5 Arrays and beam combining; 3.5.1 Arrays; 3.5.2 Wavelength beam combining; 3.5.3 Coherent beam combining; 3.5.3.1 Talbot-plane CBC; 3.5.3.1 Master-oscillator power-amplifier CBC
- 4 InP-Based 1.5-mum SCOW Devices4.1 Lasers; 4.2 Amplifiers; 4.3 Single-frequency external-cavity lasers; 4.4 Mode-locked lasers; 5 GaSb-Based 2-mum SCOWLs; 6 Summary; Acknowledgments; References; Chapter 2: High-Power, High-Efficiency Monolithic Edge-Emitting GaAs-Based Lasers with Narrow Spectral Widths; 1 Introduction; 2 DFB and DBR Simulation Methods; 2.1 Design concept 1: The DBR laser; 2.2 Design concept 2: The DFB laser; 2.3 Integration of grating into the vertical design; 2.4 Wavelength considerations; 3 Production of Short-Period Gratings; 4 Gratings with Epitaxial Overgrowth
- 5 Surface Grating Patterning6 Single-Lateral-Mode Lasers; 7 Broad-Area, Laterally Multi-Mode Diode Lasers; 8 Tapered Devices; 9 Novel Resonators; 10 Conclusions; References; Chapter 3: Advances in Mode-Locked Semiconductor Lasers; 1 Introduction; 2 Mode-Locking Techniques in Laser Diodes: The Main Features; 3 Mode-Locking Theory: Recent Progress and the State of the Art; 3.1 Self-consistent pulse profile analysis; 3.2 Traveling-wave ML models; 3.3 Frequency-domain analysis of ML; 3.4 Delay-differential model of ML; 4 The Main Predictions of Mode-Locked Laser Theory
- 4.1 Operating regime depending on the operating point4.2 The main parameters that affect mode-locked laser behaviour; 5 Important Tendencies in Optimizing the Mode-Locked Laser Performance; 5.1 Achieving a high gain-to-absorber saturation energy ratio; 5.2 Improving stability and pulse duration by reducing the SA recovery time; 5.3 Increasing the optical power: Broadening the effective modal cross section; 5.4 Engineering the bit rate. High power and high bit rate operation. Harmonic ML; 5.5 Noise considerations in ML operation; 6 Novel Mode-Locking Principles; 6.1 QD materials
- 6.2 Femtosecond pulse generation by mode-locked vertical cavity lasers. Coherent population effects as possible saturable abs6.3 Spontaneous ML in single-section lasers; 6.4 Minitaturization and integration: Ring and microring resonator cavities; 7 Overview of Possible Applications of Mode-Locked Lasers; 7.1 Optical and optically assisted communications; 7.2 Biophotonics and medical applications; 8 Concluding Remarks; References; Chapter 4: GaN Laser Diodes on Nonpolar and Semipolar Planes; 1 Introduction; 2 Material Properties of Different Planes of GaN; 2.1 Polarization; 2.2 Band structure