Silicon-germanium (SiGe) nanostructures : production, properties and applications in electronics /

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Shiraki, Yasuhiro, 1942-, Usami, Noritaka
Formato: Electrónico eBook
Idioma:Inglés
Publicado: Cambridge, UK : Philadelphia, PA : Woodhead Pub., 2011.
Colección:Woodhead Publishing in materials.
Temas:
Nanostructured materials.
Silicon alloys.
Germanium alloys.
Electronic circuits.
Nanoelectronics.
Nanostructures
Nanomat�eriaux.
Silicium > Alliages.
Germanium > Alliages.
Circuits �electroniques.
Nano�electronique.
TECHNOLOGY & ENGINEERING > Mechanical.
Electronic circuits
Germanium alloys
Nanoelectronics
Nanostructured materials
Silicon alloys
Germaniumverbindungen
Nanostrukturiertes Material
Siliciumhalbleiter
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Part 1 Introduction: Structural properties of silicon-germanium (SiGe) nanostructures
  • Electronic band structures of SiGe alloys. Part 2 Formation of nanostructures: Understanding crystal growth mechanisms in SiGe nanostructures
  • Types of SiGe bulk crystal growth methods and their applications
  • SiGe crystal growth using molecular beam epitaxy
  • SiGe crystal growth using chemical vapour deposition
  • Strain engineering of SiGe virtual substrates
  • Formation of silicon-germanium-on-insulator (SGOI)substrates
  • Miscellaneous methods and materials for SiGe based heterostructures
  • Modelling the evolution of germanium islands on silicon(001) thin films
  • Strain engineering of SiGe micro- and nanostructures. Part 3 Material properties of SiGe nanostructures: Self-diffusion and dopant diffusion in germanium (Ge) and SiGe alloys
  • Dislocations and other strain-induced defects in SiGe nanostructures
  • Transport properties of SiGe nanostructures at low temperatures
  • Transport properties of SiGe nanostructures and applications in devices
  • Microcavities and quantum cascade laser structures based on SiGe nanostructures
  • Silicide and germanide technology for interconnections in ultra large scale integrated (ULSI) applications. Part 4 Devices using Si, Ge and SiGe alloys: SiGe heterojunction bipolar transistor (HBT) and bipolar complementary metal oxide semiconductor (BiCMOS) technologies
  • SiGe-based field effect transistors (FET) and complementary metal oxide semiconductor (CMOS) technologies
  • High electron mobility germanium (Ge) metal oxide semiconductor field effect transistors (MOSFETs)
  • Silicon (Si) and germanium (Ge) in optical devices
  • Spintronics of nanostructured MnGe dilute magnetic semiconductor.

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