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Advances in solid state physics /
Festkorper Probleme XIII: Advances in Solid State Physics is a collection of papers from plenary lectures of the solid states division of the German Physical Society in Munster, on March 19-24, 1973. This collection deals with semiconductor physics, surface phenomena, and surface physics. One paper...
| Clasificación: | Libro Electrónico |
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| Autor Corporativo: | |
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Oxford :
Pergamon Press,
1973.
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| Colección: | Festkopper probleme ;
13. |
| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Festk�orper Probleme XIII: Advances in Solid State Physics; Copyright Page; Foreword; Table of Contents; Chapter 1. Electronic Properties of Two Dimensional Solids: The Layer Type Transition Metal Dichalcogenides; 1. Introduction; 2. Optical properties; 3. Band structure; 4. Excitons, thickness effects, and screening of excitons; 5. Electrical, magnetic and superconducting properties; 6. Intercalate compounds with organic molecules; 7. Intercalates with alkali and alkaline earth metals; 8. Intercalates with transition metals; 10. Conclusions; References.
- Chapter 2. Electronic Properties of One-Dimensional Solid State Systems1. Introduction; 2. Chemistry and Structural Chemistry of 1-D potentially metallic systems; 3. Physical Concepts for the Description of 1-D Potentially Metallic Systems; 4. Experimental Situation; 5. Summary and Outlook; References; Chapter 3. Compound Semiconductor Alloys; 1. Introduction; 2. Alloy Band Structure; 3. The Alloy Sample and Measurement of Its Band Structure; 4. Applications; 5. Concluding Remarks; Acknowledgments; References; Chapter 4. Van der Waals Attraction In and Between Solids; 1. Introduction.
- 2. Applications3. Schematic classification; 4. Many-electron Schr�odinger formalism; 5. Electromagnetic modes; 6. Dispersion energy; 7. Concluding remarks; References; Chapter 5. Properties of Highly Excited Semiconductors (Experimental Aspects); 1. Introduction; 2. Experimental; 3. Effects in direct-gap semiconductors; 4. Effects in indirect-gap semiconductors; 5. Futher comments; References; Chapter 6. Properties of Highly Excited Semiconductors (Theoretical Aspects); Introduction; 1. Electron-hole plasma in germanium; 2. Scattering and bound states in high-density exciton systems.
- 3. Condensation in high-density exciton systemsAcknowledgements; References; Chapter 7. Binding Energy of Excitons Bound to Defects: Theoretical Aspects; 1. Introduction; 2. Bound exciton complexes with Coulomb interaction; 3. Electron-phonon interaction; 4. Influence of the defect; 5. Excited states of bound excitons; 6. Excitons bound to isoelectronic impurities; 7. Final remarks; Acknowledgements; References; Chapter 8. Photoelectron Spectroscopy of Solids; 1. Introduction; 2. Principles of operation; 3. General scope of results; 4. Core level results; 5. Valence band density of states.
- 6. ConclusionAcknowledgements:; References; Chapter 9. Surface Quantization in Semiconductors; Historical review; Surface quantization; Theoretical description of surface quantization; Approximate calculations; Electric quantum limit; Accumulation layer; Two-dimensional electron gas in a magnetic field; Quantum size effects in semiconducting thin films; Scattering of a two-dimensional electron gas; Experimental investigations of surface quantum phenomena; References; Chapter 10. On the Physics of Clean Silicon Surfaces; 1. Introduction; 2. Preparation of Clean Silicon Surfaces.