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Tabla de Contenidos:
  • Front Cover; Semiconductor Heterojunctions; Copyright Page; Table of Contents ; Preface; Chapter 1. Theory of Heterojunctions; 1.1. Abrupt anisotype heterojunctions; 1.2. Abrupt isotype heterojunctions; 1.3. Graded heterojunctions; References; Chapter 2. Energy Band Profiles of Heterojunctions; 2.1. Profiles of anisotype heterojunctions; 2.2. Profiles of isotype heterojunctions; References; Chapter 3. Methods of Preparation of Heterojunctions; 3.1. Chemical method; 3.2. Chemical vapour-transport method; 3.3. Solution growth method; 3.4. Alloying method; 3.5. Vacuum evaporation method.
  • 3.6. Sputtering methodReferences; Chapter 4. Characterization of the Grown Layers; 4.1. Theoretical considerations; 4.2. Structure and defects; 4.3. Composition of the grown layer; 4.4. Layer thickness; 4.5. Electrical characterization; References; Chapter 5. Electrical Properties of Heterojunctions; 5.1. Capacitance-voltage characteristics; 5.2. Current-voltage characteristics; References; Chapter 6. Optoelectronic Properties of Heterojunctions; 6.1. Photoelectric properties of anisotype heterojunctions; 6.2. Photoelectric properties of isotype heterojunctions.
  • 6.3. Luminescence and radiative transitionsReferences; Chapter 7. Heterojunction Devices; 7.1. Photovoltaic converters; 7.2. Photodiodes; 7.3. Infrared converters; 7.4. Electroluminescent diodes; 7.5. Injection lasers; 7.6. Transistors; 7.7. Miscellaneous devices; References; Chapter 8. Survey of Experimental Work on Heterojunctions; References; Author Index; Subject Index.