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110211s1989 ne a ob 001 0 eng d |
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|a OCLCE
|b eng
|e pn
|c OCLCE
|d OPELS
|d E7B
|d OCLCF
|d OCLCQ
|d N$T
|d UIU
|d YDXCP
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|a 760713041
|a 842932769
|a 974619823
|a 988555019
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|a 9780444599087
|q (electronic bk.)
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|a 0444599088
|q (electronic bk.)
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|z 0444872809
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|z 9780444872807
|q (U.S.)
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|z 0444423664
|q (Series)
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|z 9780444423665
|q (Series)
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|a (OCoLC)701570982
|z (OCoLC)760713041
|z (OCoLC)842932769
|z (OCoLC)974619823
|z (OCoLC)988555019
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|a dlr
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|a QC176.9.M84
|b I58 1989
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|a SCI
|x 077000
|2 bisacsh
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|a 530.4/1
|2 19
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|a Ion beam assisted film growth /
|c edited by Tadatsugu Itoh.
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|a Amsterdam ;
|a New York :
|b Elsevier,
|c 1989.
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|a 1 online resource (xvii, 439 pages) :
|b illustrations
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|a text
|b txt
|2 rdacontent
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|a computer
|b c
|2 rdamedia
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|a online resource
|b cr
|2 rdacarrier
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1 |
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|a Beam modification of materials ;
|v 3
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|a Includes bibliographical references and indexes.
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|3 Use copy
|f Restrictions unspecified
|2 star
|5 MiAaHDL
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|a Electronic reproduction.
|b [Place of publication not identified] :
|c HathiTrust Digital Library,
|d 2011.
|5 MiAaHDL
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|a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002.
|u http://purl.oclc.org/DLF/benchrepro0212
|5 MiAaHDL
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|a digitized
|c 2011
|h HathiTrust Digital Library
|l committed to preserve
|2 pda
|5 MiAaHDL
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|a This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams. Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in this field.
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|a Print version record.
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|a Thin films, Multilayered.
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|a Ion bombardment.
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|a Sputtering (Physics)
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|a Semiconductor films.
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650 |
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6 |
|a Bombardement ionique.
|0 (CaQQLa)201-0004234
|
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|a Pulv�erisation cathodique.
|0 (CaQQLa)201-0004238
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|a Couches �a semi-conducteurs.
|0 (CaQQLa)201-0087607
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|a Couches de Langmuir-Blodgett.
|0 (CaQQLa)201-0237169
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7 |
|a SCIENCE
|x Physics
|x Condensed Matter.
|2 bisacsh
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|
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|a Ion bombardment
|2 fast
|0 (OCoLC)fst00978567
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7 |
|a Semiconductor films
|2 fast
|0 (OCoLC)fst01112128
|
650 |
|
7 |
|a Sputtering (Physics)
|2 fast
|0 (OCoLC)fst01131025
|
650 |
|
7 |
|a Thin films, Multilayered
|2 fast
|0 (OCoLC)fst01150047
|
650 |
|
7 |
|a Schichtwachstum
|2 gnd
|0 (DE-588)4273432-0
|
650 |
|
7 |
|a Ionenstrahl
|2 gnd
|0 (DE-588)4162347-2
|
650 |
|
7 |
|a D�unnschichttechnik
|2 gnd
|0 (DE-588)4136339-5
|
650 |
|
7 |
|a Ionenstrahlbearbeitung
|2 gnd
|0 (DE-588)4277034-8
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653 |
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|a Microelectronic devices
|a Thin films
|a Effects of ion beams
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1 |
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|a Itoh, Tadatsugu.
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0 |
8 |
|i Print version:
|w (DLC) 88038872
|w (OCoLC)18834466
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|a Beam modification of materials ;
|v 3.
|
856 |
4 |
0 |
|u https://sciencedirect.uam.elogim.com/science/book/9780444872807
|z Texto completo
|