Silicon carbide, 1968 proceedings.

Silicon Carbide - 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, su...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor Corporativo: International Conference on Silicon Carbide University Park, Pa.
Otros Autores: Henisch, Heinz K., Roy, Rustum
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: New York, Pergamon Press, [1969]
Temas:
Silicon carbide > Congresses.
SCIENCE > Chemistry > Inorganic.
Silicon carbide.
Congress
Conference papers and proceedings.
Actes de congr�es.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • CHAPTER 4. THE INFLUENCE OF IMPURITIES ON THE GROWTH OF SILICON CARBIDE CRYSTALS GROWN BY GAS-PHASE REACTIONSIntroduction; Enhancement of growth, and crystal structure; Vapour-Liquid-Solid Growth (V.L.S.); Acknowledgements; References; CHAPTER 5. THE INFLUENCE OF IMPURITIES ON THE GROWTH OF SILICON CARBIDE CRYSTALS BY RECRYSTALLIZATION; Introduction; Recrystallization Below 2000�C; The Influence of Nitrogen and of Ambient Pressures Higher than One Atmosphere; The Influence of Aluminium; The Influence of IIIB Elements; References.
  • CHAPTER 6. SOME OBSERVATIONS ON SILICON CARBIDE SINGLE CRYSTAL GROWTHSummary; Acknowledgments; References; CHAPTER 7. PRINCIPLES OF SOLUTION AND TRAVELLING SOLVENT GROWTH OF SILICON CARBIDE; Acknowledgment; References; CHAPTER 8. GROWTH OF SILICON CARBIDE FROM SOLUTION; Acknowledgements; References; CHAPTER 9. THE GROWTH OF SiC CRYSTALS FROM VAPOR BY THE BRIDGMAN-STOCKBARGER METHOD; Preparation of the SiC Nutrient; The Changes in Approach; The June 17-19 Sublimation Run; The Results of the June 17-19 Sublimation Run; Acknowledgments; References; CHAPTER 10. BETA SILICON CARBIDE; Background.
  • ExperimentaiComparison Properties of Alpha and Beta SiC; Discussion; Conclusion; References; CHAPTER 11. HETEROEPITAXY OF BETA SILICON CARBIDE EMPLOYING LIQUID METALS; Introduction; Experimental Procedure; Discussion and Conclusions; Acknowledgements; References; CHAPTER 12. SOME ASPECTS OF DISORDER IN SILICON CARBIDE; Experimental Methods; Experimental Results; Discussion; Conclusions; Acknowledgements; References; CHAPTER 13. DEPENDENCE OF PHYSICAL PROPERTIES ON POLYTYPE STRUCTURE; Introduction; Large Zone Structure; Experimental Results; Correlation with Percent h
  • References.

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