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Silicon carbide, 1968 proceedings.
Silicon Carbide - 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, su...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
New York,
Pergamon Press,
[1969]
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
| LEADER | 00000cam a2200000 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn698051789 | ||
| 003 | OCoLC | ||
| 005 | 20231117044547.0 | ||
| 006 | m o d | ||
| 007 | cr bn||||||abp | ||
| 007 | cr bn||||||ada | ||
| 008 | 110123s1969 nyua o 100 0 eng d | ||
| 040 | |a OCLCE |b eng |e pn |c OCLCE |d OCLCQ |d OCLCF |d OCLCQ |d OCLCO |d OPELS |d N$T |d EBLCP |d YDXCP |d NLGGC |d DEBSZ |d OCLCO |d OCL |d OCLCO |d OCLCQ |d OCLCO |d MERUC |d OCLCQ |d COM |d OCLCO |d OCLCQ | ||
| 066 | |c (S | ||
| 019 | |a 893740953 |a 907195896 | ||
| 020 | |a 9781483152615 |q (electronic bk.) | ||
| 020 | |a 1483152618 |q (electronic bk.) | ||
| 020 | |z 9780080067681 | ||
| 035 | |a (OCoLC)698051789 |z (OCoLC)893740953 |z (OCoLC)907195896 | ||
| 042 | |a dlr | ||
| 050 | 4 | |a QD181.S6 |b I5 | |
| 072 | 7 | |a SCI |x 013030 |2 bisacsh | |
| 082 | 0 | 4 | |a 546.683 |b I61s |
| 111 | 2 | |a International Conference on Silicon Carbide |d (1968 : |c University Park, Pa.) | |
| 245 | 1 | 0 | |a Silicon carbide, 1968 |b proceedings. |c Joint editors-in-chief: H.K. Henisch and R. Roy. |
| 260 | |a New York, |b Pergamon Press, |c [1969] | ||
| 300 | |a 1 online resource (372 pages) |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2011. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2011 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 588 | 0 | |a Print version record. | |
| 505 | 8 | |6 880-01 |a CHAPTER 4. THE INFLUENCE OF IMPURITIES ON THE GROWTH OF SILICON CARBIDE CRYSTALS GROWN BY GAS-PHASE REACTIONSIntroduction; Enhancement of growth, and crystal structure; Vapour-Liquid-Solid Growth (V.L.S.); Acknowledgements; References; CHAPTER 5. THE INFLUENCE OF IMPURITIES ON THE GROWTH OF SILICON CARBIDE CRYSTALS BY RECRYSTALLIZATION; Introduction; Recrystallization Below 2000�C; The Influence of Nitrogen and of Ambient Pressures Higher than One Atmosphere; The Influence of Aluminium; The Influence of IIIB Elements; References. | |
| 505 | 8 | |a CHAPTER 6. SOME OBSERVATIONS ON SILICON CARBIDE SINGLE CRYSTAL GROWTHSummary; Acknowledgments; References; CHAPTER 7. PRINCIPLES OF SOLUTION AND TRAVELLING SOLVENT GROWTH OF SILICON CARBIDE; Acknowledgment; References; CHAPTER 8. GROWTH OF SILICON CARBIDE FROM SOLUTION; Acknowledgements; References; CHAPTER 9. THE GROWTH OF SiC CRYSTALS FROM VAPOR BY THE BRIDGMAN-STOCKBARGER METHOD; Preparation of the SiC Nutrient; The Changes in Approach; The June 17-19 Sublimation Run; The Results of the June 17-19 Sublimation Run; Acknowledgments; References; CHAPTER 10. BETA SILICON CARBIDE; Background. | |
| 505 | 8 | |a ExperimentaiComparison Properties of Alpha and Beta SiC; Discussion; Conclusion; References; CHAPTER 11. HETEROEPITAXY OF BETA SILICON CARBIDE EMPLOYING LIQUID METALS; Introduction; Experimental Procedure; Discussion and Conclusions; Acknowledgements; References; CHAPTER 12. SOME ASPECTS OF DISORDER IN SILICON CARBIDE; Experimental Methods; Experimental Results; Discussion; Conclusions; Acknowledgements; References; CHAPTER 13. DEPENDENCE OF PHYSICAL PROPERTIES ON POLYTYPE STRUCTURE; Introduction; Large Zone Structure; Experimental Results; Correlation with Percent h -- References. | |
| 520 | |a Silicon Carbide - 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers abou. | ||
| 650 | 0 | |a Silicon carbide |v Congresses. | |
| 650 | 7 | |a SCIENCE |x Chemistry |x Inorganic. |2 bisacsh | |
| 650 | 7 | |a Silicon carbide. |2 fast |0 (OCoLC)fst01118657 | |
| 655 | 2 | |a Congress |0 (DNLM)D016423 | |
| 655 | 7 | |a Conference papers and proceedings. |2 fast |0 (OCoLC)fst01423772 | |
| 655 | 7 | |a Conference papers and proceedings. |2 lcgft | |
| 655 | 7 | |a Actes de congr�es. |2 rvmgf |0 (CaQQLa)RVMGF-000001049 | |
| 700 | 1 | |a Henisch, Heinz K. | |
| 700 | 1 | |a Roy, Rustum. | |
| 776 | 0 | 8 | |i Print version: |a International Conference on Silicon Carbide (1968 : University Park, Pa.). |t Silicon carbide, 1968. |d New York, Pergamon Press, [1969] |w (OCoLC)326218 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780080067681 |z Texto completo |
| 880 | 8 | |6 505-00/(S |a CHAPTER 14. OPTICAL PROPERTIES OF POLYTYPES OF SiC: INTERBAND ABSORPTION, AND LUMINESCENCE OF NITROOEN-EXCITON COMPLEXESIntroduction; Absorption Spectrum; Exciton Recombination Radiation; Conclusions; References; CHAPTER 15. PHASE STABILITY OF SILICON CARBIDE IN THE TERNARY SYSTEM Si-C-N; Introduction; Nitride-Bonded Silicon Carbide; The Ternary System Si-C-N; Abrasive Power of a- and β-SiC; References; CHAPTER 16. ELECTRONIC STRUCTURE AND OPTICAL SPECTRUM OF SILICON CARBIDE; Introduction; Cubic Silicon Carbide; 2H Silicon Carbide (Wurtzite Structure). | |
| 880 | 0 | |6 505-01/(S |a Front Cover; Silicon Carbide -- 1968; Copyright Page; OPENING REMARKS; Table of Contens; CHAPTER 1. PERSPECTIVES ON SILICON CARBIDE; Acknowledgements; References; CHAPTER 2. PROBLEMS IN SILICON CARBIDE DEVICE DEVELOPMENT; Introduction; Crystal Growth; Alpha-Beta Relationship; Analysis; Materials of Construction; References; CHAPTER 3. THERMAL PROPERTIES OF β-SILICON CARBIDE FROM 20 TO 2000�C; Introduction; Material Preparation; Mechanical Measurements; Density and Thermal Expansion; Enthalpy and Specific Heat; Thermal Diffusivity and Thermal Conductivity; Acknowledgements; References. | |