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Trap level spectroscopy in amorphous semiconductors /
Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most used spectroscopic techniques but also describes their advantages and disadvantages. Provides information on the most common spectroscop...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Oxford :
Elsevier,
2010.
|
| Colección: | Elsevier insights.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 100 | 1 | |a Mikla, Victor I. | |
| 245 | 1 | 0 | |a Trap level spectroscopy in amorphous semiconductors / |c Viktor I. Mikla. |
| 260 | |a Oxford : |b Elsevier, |c 2010. | ||
| 300 | |a 1 online resource | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Elsevier insights | |
| 520 | |a Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most used spectroscopic techniques but also describes their advantages and disadvantages. Provides information on the most common spectroscopic techniques Discusses the advantages and disadvantages of each technique. | ||
| 505 | 0 | |a Thermally stimulated depolarization currents in amorphous chalcogenides -- Carrier transport processes in amorphous solids -- Time-of-flight experiments in amorphous chalcogenide semiconductors -- Xerographic spectroscopy of states in mobility gap -- Photoinduced effects on states in the mobility gap -- Spectroscopic studies of gap states and laser-induced structural transformations in se-based as-free amorphous semiconductors. | |
| 588 | 0 | |a Print version record. | |
| 504 | |a Includes bibliographical references. | ||
| 650 | 0 | |a Amorphous semiconductors |x Spectra. | |
| 650 | 0 | |a Amorphous semiconductors |x Defects |x Analysis. | |
| 650 | 0 | |a Deep level transient spectroscopy. | |
| 650 | 6 | |a Semi-conducteurs amorphes |0 (CaQQLa)201-0318263 |x Spectre. |0 (CaQQLa)201-0374293 | |
| 650 | 6 | |a Semi-conducteurs amorphes |0 (CaQQLa)201-0318263 |x D�efauts |0 (CaQQLa)201-0373897 |x Analyse. |0 (CaQQLa)201-0374819 | |
| 650 | 6 | |a Spectroscopie DLTS. |0 (CaQQLa)201-0322859 | |
| 650 | 7 | |a Deep level transient spectroscopy |2 fast |0 (OCoLC)fst00889499 | |
| 776 | 0 | 8 | |i Print version: |a Mikla, Victor I. |t Trap level spectroscopy in amorphous semiconductors. |d Oxford : Elsevier, 2010 |z 9780123847157 |z 012384715X |w (OCoLC)567148516 |
| 830 | 0 | |a Elsevier insights. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780123847157 |z Texto completo |