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III-V compound semiconductors and semiconductor properties of superionic materials /
SEMICONDUCTORS & SEMIMETALS V26.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
1988.
|
| Colección: | Semiconductors and semimetals ;
v. 26. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Semiconductors and Semimetals: III-V Compound Semiconductors and Semiconductor Properties of Superionic Materials; Copyright Page; Contents; Contributors; Preface; Chapter 1. III-V Compounds; I. Introduction; II. Bulk Crystals; III. Epitaxial Growth; IV. Impurity Effects, Space Charge, and Deep Levels; V. Characterization and Analysis; VI. Surface Properties and Physical Chemistry; VII. Technology; VIII. Microwave Devices and Integrated Circuits; IX. Optoelectronic Devices; X. Concluding Remarks; References; Chapter 2. InAs-Alloyed GaAs Substrates for Direct Implantation
- I. IntroductionII. Crystal Growth; III. Crystallography and Structure; IV. Electrical and Optical Behavior; V. InAs-Alloyed GaAs as a Substrate for Ion Implantation; VI. Discussion; VII. Recent Developments; References; Chapter 3. Deep Levels in III-V Compound Semiconductors Grown by MBE; I. Introduction; II. Molecular Beam Epitaxial Growth; III. The Physics of Deep Levels; IV. Measurement Techniques; V. Commonly Observed Deep Levels; VI. Trapping and Associated Effects in Heterostructures; VII. Conclusion; References; Chapter 4. Semiconductor Properties of Superionic Materials
- List of SymbolsI. Introduction; II. Delocalized Electrons in Superionic Materials; III. Phenomenological Description of Transport Phenomena; IV. Stationary Electron-Hole Currents in Superionic Materials; V. Nonstationary Processes in Superionic Materials; VI. Photochemical Phenomena in Superionic Materials; VII. Selected Aspects of Electronic Phenomena in Superionic Materials; VIII. Apparatus and devices Based on Superionic Materials; IX. Conclusion; References; Appendix; References for Table A; Index; Contents of Previous Volumes