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III-V compound semiconductors and semiconductor properties of superionic materials /
SEMICONDUCTORS & SEMIMETALS V26.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
1988.
|
| Colección: | Semiconductors and semimetals ;
v. 26. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
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| 020 | |a 0127521267 |q (electronic bk.) | ||
| 020 | |a 9780127521268 |q (electronic bk.) | ||
| 020 | |a 9786611760205 | ||
| 020 | |a 6611760202 | ||
| 020 | |a 0080864236 | ||
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| 035 | |a (OCoLC)646758912 |z (OCoLC)1162013643 | ||
| 050 | 4 | |a QC610.9 |b .S4826 1988eb | |
| 082 | 0 | 4 | |a 621.3815/2 |2 23 |
| 245 | 0 | 0 | |a III-V compound semiconductors and semiconductor properties of superionic materials / |c edited by R.K. Willardson and Albert C. Beer. |
| 246 | 3 | |a Three-five compound semiconductors and semiconductor properties of superionic materials | |
| 260 | |a Boston : |b Academic Press, |c 1988. | ||
| 300 | |a 1 online resource (xix, 383 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals, |x 0080-8784 ; |v v. 26 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Semiconductors and Semimetals: III-V Compound Semiconductors and Semiconductor Properties of Superionic Materials; Copyright Page; Contents; Contributors; Preface; Chapter 1. III-V Compounds; I. Introduction; II. Bulk Crystals; III. Epitaxial Growth; IV. Impurity Effects, Space Charge, and Deep Levels; V. Characterization and Analysis; VI. Surface Properties and Physical Chemistry; VII. Technology; VIII. Microwave Devices and Integrated Circuits; IX. Optoelectronic Devices; X. Concluding Remarks; References; Chapter 2. InAs-Alloyed GaAs Substrates for Direct Implantation | |
| 505 | 8 | |a I. IntroductionII. Crystal Growth; III. Crystallography and Structure; IV. Electrical and Optical Behavior; V. InAs-Alloyed GaAs as a Substrate for Ion Implantation; VI. Discussion; VII. Recent Developments; References; Chapter 3. Deep Levels in III-V Compound Semiconductors Grown by MBE; I. Introduction; II. Molecular Beam Epitaxial Growth; III. The Physics of Deep Levels; IV. Measurement Techniques; V. Commonly Observed Deep Levels; VI. Trapping and Associated Effects in Heterostructures; VII. Conclusion; References; Chapter 4. Semiconductor Properties of Superionic Materials | |
| 505 | 8 | |a List of SymbolsI. Introduction; II. Delocalized Electrons in Superionic Materials; III. Phenomenological Description of Transport Phenomena; IV. Stationary Electron-Hole Currents in Superionic Materials; V. Nonstationary Processes in Superionic Materials; VI. Photochemical Phenomena in Superionic Materials; VII. Selected Aspects of Electronic Phenomena in Superionic Materials; VIII. Apparatus and devices Based on Superionic Materials; IX. Conclusion; References; Appendix; References for Table A; Index; Contents of Previous Volumes | |
| 520 | |a SEMICONDUCTORS & SEMIMETALS V26. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Compound semiconductors. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 2 | |a Semiconductors |0 (DNLM)D012666 | |
| 650 | 6 | |a Compos�es semi-conducteurs. |0 (CaQQLa)201-0286429 | |
| 650 | 6 | |a Semi-conducteurs. |0 (CaQQLa)201-0318258 | |
| 650 | 7 | |a semiconductor. |2 aat |0 (CStmoGRI)aat300015117 | |
| 650 | 7 | |a Compound semiconductors. |2 fast |0 (OCoLC)fst00871813 | |
| 650 | 7 | |a Semiconductors. |2 fast |0 (OCoLC)fst01112198 | |
| 700 | 1 | |a Willardson, Robert K. | |
| 700 | 1 | |a Beer, Albert C. | |
| 776 | 0 | |z 0127521267 | |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 26. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521268 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/26 |z Texto completo |