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Applications and devices. Part B /
SEMICONDUCTORS & SEMIMETALS V7B.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
New York ; London :
Academic Press,
1971.
|
| Colección: | Semiconductors and semimetals ;
v. 7B. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Semiconductors and Semimetals, Volume 7; Copyright Page; Contents; List of Contributors; Preface; Contents of Previous Volumes; Part I: Dioes; Chapter 7. Impatt Diodes; I. Introduction; II. Dynamic Negative Resistance in pn Junction in Breakdown; III. Fundamental Phenomena and Mathematical Formulation; IV. Analysis of Electrical Characteristics; V. Design Considerations; VI. Diode Fabrication; VII. Observed Electrical Characteristics; VIII. Conclusions; Appendix A. DC Equations and Numerical Solution; Appendix B. Small-Signal AC Solution
- Appendix C. Addenda to Numerical Analysis of Large-Signal Operation of Read DiodeAppendix D. Theory of TRAPATT Mode of Operation; List of Symbols; Chapter 8. Tunnel Diodes; I. Introduction; II. The Physics of Tunnel Diode Operation; III. Principles of Tunnel Diode Fabrication; IV. Terminal Properties of Tunnel Diodes; V. Experimental Characterization of Tunnel Diodes; VI. Tunnel Diode Applications in Sinusoidal Circuits; VII. Tunnel Diode Applications in Pulse and Digital Circuits; VIII. Present and Future Role of Tunnel Diodes; Chapter 9. Silicon Carbide Junction Devices; I. Introduction
- II. Silicon Carbide as a Semiconductor MaterialIII. Device Techniques; IV. Silicon Carbide Power Diodes; V. p-n Junction Detectors; VI. Active Devices; VII. Irradiation Effects; VIII. Luminescent Diodes; IX. Summary; X. Addendum; Part II: Rectifiers; Chapter 10. High-Temperature Power Rectifiers of GaAs1
- xPx; I. Introduction; II. High-Temperature Rectifier Design Considerations; III. p-n Junction Formation; IV. Device Fabrication; V. Rectifier Test Results; Author Index; Subject Index