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Applications and devices. Part B /

SEMICONDUCTORS & SEMIMETALS V7B.

Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Beer, Albert C., Willardson, Robert K.
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York ; London : Academic Press, 1971.
Colección:Semiconductors and semimetals ; v. 7B.
Temas:
Acceso en línea:Texto completo
Texto completo

MARC

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082 0 4 |a 621.3185/22  |2 23 
245 0 0 |a Applications and devices.  |n Part B /  |c edited by R.K. Willardson, Albert C. Beer. 
260 |a New York ;  |a London :  |b Academic Press,  |c 1971. 
300 |a 1 online resource (xii, 746 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Semiconductors and semimetals ;  |v v. 7B 
504 |a Includes bibliographical references and index. 
588 0 |a Print version record. 
505 0 |a Front Cover; Semiconductors and Semimetals, Volume 7; Copyright Page; Contents; List of Contributors; Preface; Contents of Previous Volumes; Part I: Dioes; Chapter 7. Impatt Diodes; I. Introduction; II. Dynamic Negative Resistance in pn Junction in Breakdown; III. Fundamental Phenomena and Mathematical Formulation; IV. Analysis of Electrical Characteristics; V. Design Considerations; VI. Diode Fabrication; VII. Observed Electrical Characteristics; VIII. Conclusions; Appendix A. DC Equations and Numerical Solution; Appendix B. Small-Signal AC Solution 
505 8 |a Appendix C. Addenda to Numerical Analysis of Large-Signal Operation of Read DiodeAppendix D. Theory of TRAPATT Mode of Operation; List of Symbols; Chapter 8. Tunnel Diodes; I. Introduction; II. The Physics of Tunnel Diode Operation; III. Principles of Tunnel Diode Fabrication; IV. Terminal Properties of Tunnel Diodes; V. Experimental Characterization of Tunnel Diodes; VI. Tunnel Diode Applications in Sinusoidal Circuits; VII. Tunnel Diode Applications in Pulse and Digital Circuits; VIII. Present and Future Role of Tunnel Diodes; Chapter 9. Silicon Carbide Junction Devices; I. Introduction 
505 8 |a II. Silicon Carbide as a Semiconductor MaterialIII. Device Techniques; IV. Silicon Carbide Power Diodes; V. p-n Junction Detectors; VI. Active Devices; VII. Irradiation Effects; VIII. Luminescent Diodes; IX. Summary; X. Addendum; Part II: Rectifiers; Chapter 10. High-Temperature Power Rectifiers of GaAs1 -- xPx; I. Introduction; II. High-Temperature Rectifier Design Considerations; III. p-n Junction Formation; IV. Device Fabrication; V. Rectifier Test Results; Author Index; Subject Index 
520 |a SEMICONDUCTORS & SEMIMETALS V7B. 
546 |a English. 
650 0 |a Diodes. 
650 0 |a Semiconductors. 
650 0 |a Semimetals. 
650 6 |a Diodes.  |0 (CaQQLa)201-0019903 
650 6 |a Semi-conducteurs.  |0 (CaQQLa)201-0318258 
650 6 |a Semi-m�etaux.  |0 (CaQQLa)201-0096003 
650 7 |a semiconductor.  |2 aat  |0 (CStmoGRI)aat300015117 
650 7 |a SCIENCE  |x Physics  |x Electricity.  |2 bisacsh 
650 7 |a Diodes  |2 fast  |0 (OCoLC)fst00894040 
650 7 |a Semiconductors  |2 fast  |0 (OCoLC)fst01112198 
650 7 |a Semimetals  |2 fast  |0 (OCoLC)fst01112274 
700 1 |a Beer, Albert C. 
700 1 |a Willardson, Robert K. 
776 0 8 |i Print version:  |t Semiconductors and semimetals. Volume 7, Applications and devices, Part B.  |d New York ; London : Academic Press, 1971  |z 012752147X  |z 9780127521473  |w (OCoLC)277985616 
830 0 |a Semiconductors and semimetals ;  |v v. 7B. 
856 4 0 |u https://sciencedirect.uam.elogim.com/science/book/9780127521473  |z Texto completo 
856 4 0 |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/7/part/PB  |z Texto completo