Cargando…
The mechanical properties of semiconductors /
SEMICONDUCTORS & amp; SEMIMETALS V37.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston, MA :
Academic Press,
�1992.
|
| Colección: | Semiconductors and semimetals ;
v. 37. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; The Mechanical Properties of Semiconductors; Contents; Copyright Page; Contributors; Preface; Chapter 1. Elastic Constants and Related Properties of Semiconductor Compounds and Their Alloys; I. Introduction; ll. Measurement Methods; lll. Theoretical and Experimental Results; IV. Dislocations and Hardness; V. Concluding Remarks; Acknowledgments; References.; Chapter 2. Fracture of Silicon and Other Semiconductors; I. Introduction; ll. Crack Extension: The Mechanics of Fracture; lll. Fracture Mechanisms; IV. Fracture of Semiconductors; V. The Brittle-to-Ductile Transition.
- VI. Environmental EffectsVII. Closing Remarks; Acknowledgments; References; Appendix: Fracture Resistance Measurements by Indentation; Chapter 3. The Plasticity of Elemental and Compound Semiconductors; l. Introduction; ll. General; lll. Lower Yield Point and Creep at Inflection Point; IV. Dynamical Recovery; V. Effect of High Doping; VI. Addendum; Acknowledgments; References; Chapter 4. Mechanical Behavior of Compound Semiconductors; I. Introduction; ll. General Deformation Behavior of Elemental and Compound Semiconductors; lll. Hardness of Ill-V and II-VI Compounds.
- IV. Compressive/Tensile Strength of Compound and Isovalent-DopedV. Non-isovalent Group II and VI Dopants in III-V Compounds; VI. The Role of Si Doping in GaAs; VII. Crystal Growth; VIII. Summary; References; Chapter 5. Deformation Behavior of Compound Semiconductors; I. Introduction; ll. Dislocations and Deformation-Induced Stacking Faults; lll. Deformation Characteristics of Binary Compound Semiconductors; IV. Photoplastic Effects in Compound Semiconductors.
- V. Atomic Ordering and Surface Phase Separation in Ternary and Quaternary III-V Semiconductors and Their Ramifications in Degadation Resistance of Light-Emitting DevicesVI. Summary; Acknowledgments; References; Chapter 6. Injection of Dislocations into Strained Multilayer Structures; I. Introduction; ll. Dislocation Behavior; lll. Interface Equilibrium; IV. Partial Equilibrium Arrays; V. Dislocation Spreading; VI. Dislocation Injection; VII. Summary; Acknowledgments; References; Chapter 7. Critical Technologies for the Micromachining of Silicon; I. Introduction.
- Ll. Wet Chemical Etching of Single-Crystal Siliconlll. Dry Etching Techniques for Micromachining; IV. Bonding and Micromachining; V. Conclusions; Acknowledgments; References; Chapter 8. Processing and Semiconductor Thermoelastic Behavior; I. Introduction; ll. Thermoelastic Model of Dislocations; lll. Prediction of Defect Onset; IV. Application of Thermoelastic Model; V. Conclusions; Acknowledgments; References; List of Symbols; INDEX; CONTENTS OF VOLUMES IN THIS SERIES.