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The mechanical properties of semiconductors /
SEMICONDUCTORS & amp; SEMIMETALS V37.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston, MA :
Academic Press,
�1992.
|
| Colección: | Semiconductors and semimetals ;
v. 37. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
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| 245 | 0 | 4 | |a The mechanical properties of semiconductors / |c Volume editors, Katherine T. Faber, Kevin J. Molloy. |
| 260 | |a Boston, MA : |b Academic Press, |c �1992. | ||
| 300 | |a 1 online resource (x, 375 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals ; |v v. 37 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2010. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2010 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 505 | 0 | |a Front Cover; The Mechanical Properties of Semiconductors; Contents; Copyright Page; Contributors; Preface; Chapter 1. Elastic Constants and Related Properties of Semiconductor Compounds and Their Alloys; I. Introduction; ll. Measurement Methods; lll. Theoretical and Experimental Results; IV. Dislocations and Hardness; V. Concluding Remarks; Acknowledgments; References.; Chapter 2. Fracture of Silicon and Other Semiconductors; I. Introduction; ll. Crack Extension: The Mechanics of Fracture; lll. Fracture Mechanisms; IV. Fracture of Semiconductors; V. The Brittle-to-Ductile Transition. | |
| 505 | 8 | |a VI. Environmental EffectsVII. Closing Remarks; Acknowledgments; References; Appendix: Fracture Resistance Measurements by Indentation; Chapter 3. The Plasticity of Elemental and Compound Semiconductors; l. Introduction; ll. General; lll. Lower Yield Point and Creep at Inflection Point; IV. Dynamical Recovery; V. Effect of High Doping; VI. Addendum; Acknowledgments; References; Chapter 4. Mechanical Behavior of Compound Semiconductors; I. Introduction; ll. General Deformation Behavior of Elemental and Compound Semiconductors; lll. Hardness of Ill-V and II-VI Compounds. | |
| 505 | 8 | |a IV. Compressive/Tensile Strength of Compound and Isovalent-DopedV. Non-isovalent Group II and VI Dopants in III-V Compounds; VI. The Role of Si Doping in GaAs; VII. Crystal Growth; VIII. Summary; References; Chapter 5. Deformation Behavior of Compound Semiconductors; I. Introduction; ll. Dislocations and Deformation-Induced Stacking Faults; lll. Deformation Characteristics of Binary Compound Semiconductors; IV. Photoplastic Effects in Compound Semiconductors. | |
| 505 | 8 | |a V. Atomic Ordering and Surface Phase Separation in Ternary and Quaternary III-V Semiconductors and Their Ramifications in Degadation Resistance of Light-Emitting DevicesVI. Summary; Acknowledgments; References; Chapter 6. Injection of Dislocations into Strained Multilayer Structures; I. Introduction; ll. Dislocation Behavior; lll. Interface Equilibrium; IV. Partial Equilibrium Arrays; V. Dislocation Spreading; VI. Dislocation Injection; VII. Summary; Acknowledgments; References; Chapter 7. Critical Technologies for the Micromachining of Silicon; I. Introduction. | |
| 505 | 8 | |a Ll. Wet Chemical Etching of Single-Crystal Siliconlll. Dry Etching Techniques for Micromachining; IV. Bonding and Micromachining; V. Conclusions; Acknowledgments; References; Chapter 8. Processing and Semiconductor Thermoelastic Behavior; I. Introduction; ll. Thermoelastic Model of Dislocations; lll. Prediction of Defect Onset; IV. Application of Thermoelastic Model; V. Conclusions; Acknowledgments; References; List of Symbols; INDEX; CONTENTS OF VOLUMES IN THIS SERIES. | |
| 520 | |a SEMICONDUCTORS & amp; SEMIMETALS V37. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Compound semiconductors. | |
| 650 | 0 | |a Semiconductors |x Mechanical properties. | |
| 650 | 0 | |a Semimetals. | |
| 650 | 6 | |a Compos�es semi-conducteurs. |0 (CaQQLa)201-0286429 | |
| 650 | 6 | |a Semi-conducteurs |0 (CaQQLa)201-0318258 |x Propri�et�es m�ecaniques. |0 (CaQQLa)201-0374312 | |
| 650 | 6 | |a Semi-m�etaux. |0 (CaQQLa)201-0096003 | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a Compound semiconductors |2 fast |0 (OCoLC)fst00871813 | |
| 650 | 7 | |a Semimetals |2 fast |0 (OCoLC)fst01112274 | |
| 650 | 7 | |a Transporte Eletronico E Propriedades Eletricas De Superficies, Interfaces E Peliculas. |2 larpcal | |
| 700 | 1 | |a Faber, KAtherine T. | |
| 700 | 1 | |a Molloy, Kevin J. | |
| 776 | 0 | 8 | |i Print version: |t Mechanical properties of semiconductors. |d Boston, MA : Academic Press, �1992 |w (DLC) 85642319 |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 37. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521374 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/37 |z Texto completo |