High brightness light emitting diodes /

Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of t...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Otros Autores: Stringfellow, G. B. (Gerald B.), 1942-, Craford, M. George
Formato: Electrónico eBook
Idioma:Inglés
Publicado: San Diego : Academic Press, �1997.
Colección:Semiconductors and semimetals ; v. 48.
Temas:
Light emitting diodes.
Semiconductors.
Semimetals.
Diodes �electroluminescentes.
Semi-conducteurs.
Semi-m�etaux.
semiconductor.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
Light emitting diodes
Semiconductors
Semimetals
Acceso en línea:Texto completo
Texto completo
Tabla de Contenidos:
  • Front Cover; High Brightness Light Emitting Diodes; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Materials Issues in High-Brightness Light-Emitting Diodes; I. Introduction; II. Techniques for Production of III-V Semiconductors for Light-Emitting Diodes; III. Selection of Materials for High-Brightness Light-Emitting Diodes; IV. Fundamental Thermodynamicand Kinetic Considerations; V. Specific Materials Systems; VI. Conclusions; References; Chapter 2. Overview of Device Issues in High-Brightness Light-Emitting Diodes; I. Introduction; II. Light-Emitting Diode Device Issues.
  • III. Technology Status and Future PotentialReferences; Chapter 3. AlGaAs Red Light-Emitting Diodes; I. Introduction; II. Device Design; III. Crystal Growth; IV. Device Fabrication; V. Comparison with Other Types of Red Light-Emitting Diodes; VI. Temperature-Dependent Properties; VII. Reliability Characteristics.; References; Chapter 4. OMVPE Growth of AlGaInP for High-Efficiency Visible Light-Emitting Diodes; I. Introduction; II. General Overview of Organometallic Vapor-Phase Epitaxy of AlGaInP; III. Organometallic Vapor-Phase Epitaxy of AlGaInP-Critical Issues.
  • IV. High-Volume Manufacturing IssuesV. Summary; References; Chapter 5. AlGaInP Light-Emitting Diodes; I. Introduction; II. Active Layer Design; III. Current-Spreading in Device Structures; IV. Current-Blocking Structures; V. Light Extraction; VI. Wafer Fabrication Techniques; VII. Device Performance Characteristics; VIII. Conclusions and Outlook.; References; Chapter 6. Applications for High-Brightness Light-Emitting Diodes; I. Introduction; II. Photometry and Color Measurement Principles; III. Automotive Signal Lighting; IV. Automotive Interior Lighting.; V. Traffic Signal Lights.
  • VI. Large-Area DisplaysVII. Liquid Crystal Display Backlighting; References; Chapter 7. Organometallic Vapor-Phase Epitaxy of Gallium Nitride for High-Brightness Blue Light-Emitting Diodes; I. Introduction; II. Historical Overview; III. Design and Structure of Nitride-Based Superbright Light-Emitting; IV. Efficiency, Wavelength, and Lifetime; V. Laser Diodes; VI. Summary; References; Chapter 8. Group III-V Nitride-Based Ultraviolet Blue-Green-Yellow Light-Emitting Diodes and Laser Diodes; I. Introduction; II. Gallium Nitride Growth; III. InGaN Growth; IV. Light-Emitting Diodes.
  • V. InGaN Multiple Quantum Well Structure Laser DiodesVI. Summary; References; Index; Contents of Volumes in this Series.

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