Cargando…
High brightness light emitting diodes /
Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of t...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
San Diego :
Academic Press,
�1997.
|
| Colección: | Semiconductors and semimetals ;
v. 48. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
| LEADER | 00000cam a2200000Ma 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn646756637 | ||
| 003 | OCoLC | ||
| 005 | 20231117033227.0 | ||
| 006 | m o d | ||
| 007 | cr cn||||||||| | ||
| 008 | 081105s1997 caua ob 001 0 eng d | ||
| 040 | |a E7B |b eng |e pn |c E7B |d OCLCQ |d N$T |d IDEBK |d OCLCQ |d OPELS |d OCLCQ |d OCLCF |d YDXCP |d EBLCP |d OCLCQ |d DEBSZ |d OCLCQ |d D6H |d LEAUB |d OCLCQ |d VLY |d OCLCO |d S2H |d OCLCO |d OCLCQ |d OCLCO | ||
| 019 | |a 289389671 |a 808732811 |a 906689965 |a 1162333194 |a 1293010802 |a 1295335352 |a 1302061253 | ||
| 020 | |a 9780080864457 |q (electronic bk.) | ||
| 020 | |a 0080864457 |q (electronic bk.) | ||
| 020 | |a 0127521569 |q (electronic bk.) | ||
| 020 | |a 9780127521565 |q (electronic bk.) | ||
| 020 | |a 1281715573 | ||
| 020 | |a 9781281715579 | ||
| 020 | |a 9786611715571 | ||
| 020 | |a 6611715576 | ||
| 035 | |a (OCoLC)646756637 |z (OCoLC)289389671 |z (OCoLC)808732811 |z (OCoLC)906689965 |z (OCoLC)1162333194 |z (OCoLC)1293010802 |z (OCoLC)1295335352 |z (OCoLC)1302061253 | ||
| 050 | 4 | |a TK7871.89.L53 |b H54 1997eb | |
| 072 | 7 | |a TEC |x 008100 |2 bisacsh | |
| 072 | 7 | |a TEC |x 008090 |2 bisacsh | |
| 082 | 0 | 4 | |a 621.3815/22 |2 22 |
| 245 | 0 | 0 | |a High brightness light emitting diodes / |c editors, G.B. Stringfellow, M. George Craford. |
| 260 | |a San Diego : |b Academic Press, |c �1997. | ||
| 300 | |a 1 online resource (xiv, 469 pages) : |b illustrations. | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals ; |v v. 48 | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 520 | |a Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of this important field. | ||
| 505 | 0 | |a Front Cover; High Brightness Light Emitting Diodes; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Materials Issues in High-Brightness Light-Emitting Diodes; I. Introduction; II. Techniques for Production of III-V Semiconductors for Light-Emitting Diodes; III. Selection of Materials for High-Brightness Light-Emitting Diodes; IV. Fundamental Thermodynamicand Kinetic Considerations; V. Specific Materials Systems; VI. Conclusions; References; Chapter 2. Overview of Device Issues in High-Brightness Light-Emitting Diodes; I. Introduction; II. Light-Emitting Diode Device Issues. | |
| 505 | 8 | |a III. Technology Status and Future PotentialReferences; Chapter 3. AlGaAs Red Light-Emitting Diodes; I. Introduction; II. Device Design; III. Crystal Growth; IV. Device Fabrication; V. Comparison with Other Types of Red Light-Emitting Diodes; VI. Temperature-Dependent Properties; VII. Reliability Characteristics.; References; Chapter 4. OMVPE Growth of AlGaInP for High-Efficiency Visible Light-Emitting Diodes; I. Introduction; II. General Overview of Organometallic Vapor-Phase Epitaxy of AlGaInP; III. Organometallic Vapor-Phase Epitaxy of AlGaInP-Critical Issues. | |
| 505 | 8 | |a IV. High-Volume Manufacturing IssuesV. Summary; References; Chapter 5. AlGaInP Light-Emitting Diodes; I. Introduction; II. Active Layer Design; III. Current-Spreading in Device Structures; IV. Current-Blocking Structures; V. Light Extraction; VI. Wafer Fabrication Techniques; VII. Device Performance Characteristics; VIII. Conclusions and Outlook.; References; Chapter 6. Applications for High-Brightness Light-Emitting Diodes; I. Introduction; II. Photometry and Color Measurement Principles; III. Automotive Signal Lighting; IV. Automotive Interior Lighting.; V. Traffic Signal Lights. | |
| 505 | 8 | |a VI. Large-Area DisplaysVII. Liquid Crystal Display Backlighting; References; Chapter 7. Organometallic Vapor-Phase Epitaxy of Gallium Nitride for High-Brightness Blue Light-Emitting Diodes; I. Introduction; II. Historical Overview; III. Design and Structure of Nitride-Based Superbright Light-Emitting; IV. Efficiency, Wavelength, and Lifetime; V. Laser Diodes; VI. Summary; References; Chapter 8. Group III-V Nitride-Based Ultraviolet Blue-Green-Yellow Light-Emitting Diodes and Laser Diodes; I. Introduction; II. Gallium Nitride Growth; III. InGaN Growth; IV. Light-Emitting Diodes. | |
| 505 | 8 | |a V. InGaN Multiple Quantum Well Structure Laser DiodesVI. Summary; References; Index; Contents of Volumes in this Series. | |
| 546 | |a English. | ||
| 650 | 0 | |a Light emitting diodes. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a Semimetals. | |
| 650 | 6 | |a Diodes �electroluminescentes. |0 (CaQQLa)201-0060416 | |
| 650 | 6 | |a Semi-conducteurs. |0 (CaQQLa)201-0318258 | |
| 650 | 6 | |a Semi-m�etaux. |0 (CaQQLa)201-0096003 | |
| 650 | 7 | |a semiconductor. |2 aat |0 (CStmoGRI)aat300015117 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a Light emitting diodes |2 fast |0 (OCoLC)fst00998542 | |
| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 650 | 7 | |a Semimetals |2 fast |0 (OCoLC)fst01112274 | |
| 700 | 1 | |a Stringfellow, G. B. |q (Gerald B.), |d 1942- | |
| 700 | 1 | |a Craford, M. George. | |
| 776 | 0 | 8 | |i Print version: |t High brightness light emitting diodes. |d San Diego : Academic Press, �1997 |z 0127521569 |z 9780127521565 |w (DLC) 97213195 |w (OCoLC)37886706 |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 48. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521565 |z Texto completo |
| 856 | 4 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/48 |z Texto completo | |