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Semiconductors and semimetals. optical and photothermal characterization / Volume 46, Effect of disorder and defects in ion-implanted semiconductors :
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need t...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
San Diego :
Academic Press,
�1997.
|
| Colección: | Semiconductors and semimetals ;
46. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
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| 245 | 0 | 0 | |a Semiconductors and semimetals. |n Volume 46, |p Effect of disorder and defects in ion-implanted semiconductors : |b optical and photothermal characterization / |c volume editors, Constantinos Christofides, G�erard Ghibaudo. |
| 246 | 3 | 0 | |a Effect of disorder and defects in ion-implanted semiconductors : |b optical and photothermal characterization |
| 260 | |a San Diego : |b Academic Press, |c �1997. | ||
| 300 | |a 1 online resource (xvi, 316 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals ; |v 46 | |
| 588 | 0 | |a Print version record. | |
| 520 | |a Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Key Features * Provides basic knowledge of ion implantation-induced defects * Focuses on physical mechanisms of defect annealing * Utilizes electrical, physical, and optical characterization tools for processed semiconductors * Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination. | ||
| 505 | 0 | |a Front Cover; Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization; Copyright Page; Contents; List of Contributors; Foreword; Chapter 1. Ellipsometric Analysis; I. Introduction; II. Principle of Ellipsometry; III. General Remarks; IV. Optical Models; V. The Complex Dielectric Function; VI. Light Penetration; VII. Effective Medium Theory; VIII. Examples; IX. Sophisticated Multilayer Optical Models; X. Closing Remarks; References; Chapter 2. Transmission and Reflection Spectroscopy on Ion Implanted Semiconductors; I. Introduction | |
| 505 | 8 | |a II. General OverviewIII. Recent Optical Experimental Studies on Implanted Silicon; IV. Theoretic Background; V. Discussion and Analysis; VI. Summary; References; Chapter 3. Photoluminescence and Raman Scattering of Ion Implanted Semiconductors. Influence of Annealing; I. Introduction; II. Photoluminescence and Raman Scattering Theory; III. Photoluminescence and Raman Scattering Techniques; IV. Characterization of Ion-Implanted Semiconductors; V. Summary and Future Perspectives; References | |
| 505 | 8 | |a Chapter 4. Photomodulated Thermoreflectance Investigation of Implanted Wafers. Annealing Kinetics of DefectsI. Introduction; II. Photomodulated Thermoreflectance Theory; III. Experimental Methodology; IV. Experimental Results and Discussion; V. Recent Developments; VI. Summary and Future Perspectives; References; Chapter 5. Photothermal Deflection Spectroscopy Characterization of Ion-Implanted and Annealed Silicon Films; I. Introduction; II. Theory and Experiment; III. Results and Discussion; IV. Conclusions; References | |
| 505 | 8 | |a Chapter 6. Photothermal Deep-Level Transient Spectroscopy of Impurities and Defects in SemiconductorsI. Introduction; II. Physical Foundations of Photothermal Radiometric Deep-Level Transient Spectroscopy; III. Theory of Photothermal Radiometric Deep-Level Transient Spectroscopy; IV. Instrumental Foundations of Photothermal Radiometric Deep-Level Transient Spectroscopy: The Lock-In Rate-Window Method; V. Experiment and Discussion; VI. Potential for Ion-Implantation Diagnostics and Conclusions; References; Chapter 7. Ion Implantation into Quantum-Well Structures; I. Introduction | |
| 505 | 8 | |a II. General BackgroundIII. Ion-Beam-Induced Modifications of QW Structures; IV. Future Trends and Applications; References; Chapter 8. Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors; I. Introduction; II. Materials and Impurities; III. Ion Implantation; IV. Annealing; V. Conclusion; References; Index; Contents of Volumes in This Series | |
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors |x Defects. | |
| 650 | 0 | |a Ion implantation. | |
| 650 | 6 | |a Semi-conducteurs |x D�efauts. |0 (CaQQLa)201-0318262 | |
| 650 | 6 | |a Ions |x Implantation. |0 (CaQQLa)201-0072132 | |
| 650 | 7 | |a Ion implantation |2 fast |0 (OCoLC)fst00978590 | |
| 650 | 7 | |a Semiconductors |x Defects |2 fast |0 (OCoLC)fst01112211 | |
| 700 | 1 | |a Ghibaudo, G�erard. | |
| 700 | 1 | |a Christofides, Constantinos. | |
| 776 | 0 | |z 0127521461 | |
| 830 | 0 | |a Semiconductors and semimetals ; |v 46. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521466 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/46 |z Texto completo |