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High pressure in semiconductor physics. II /
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing n...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
San Diego :
Academic Press,
�1998.
|
| Colección: | Semiconductors and semimetals ;
55. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; High Pressure in Semiconductor Physics II; Copyright Page; Contents; Preface; List of Contributors; Chapter 1. Parallel Transport in Low-Dimensional Semiconductor Structures; I. Introduction; II. The Effect of Pressure; III. Integer Quantum Hall Effect; IV. Fractional Quantum Hall Effect; V. Magnetophonon Resonance Effect Under Hydrostatic Pressure in GaAs/Al0.28Ga0.72As, Ga0 47 In0.53As/Al0.48In0.48In0.52, and in Ga0.47In0.53As/InP Heterojunctions; Acknowledgments; References
- Chapter 2. Tunneling Under Pressure: High-Pressure Studies of Vertical Transport in Semiconductor HeterostructuresI. Introduction; II. Theory and Calculation; III. Experimental Techniques; IV. High Pressure Studies of Negative Differential Resistance; V. Concluding Remarks; Acknowledgments; References; Chapter 3. Phonons, Strains, and Pressure in Semiconductors; I. Introduction; II. Background; III. Effects of Hydrostatic Pressure on Optical Phonons; IV. Effects of Strains on Optical Phonons; V. Strain Characterization of Heterojunctions and Superlattices; VI. Concluding Remarks
- AcknowledgmentsAppendix; References; Chapter 4. Effects of External Uniaxial Stress on the Optical Properties of Semiconductors and Semiconductor Microstructures; I. Introduction; II. Effects of Homogeneous Deformation on Electronic Energy Levels; III. Determination of Intervalley Electron-Phonon and Hole-Phonon Interactions in Indirect Gap Semiconductors; IV. Piezo-Optical Response of Ge and GaAs in the Opaque Region; V. Intrinsic Piezobirefringence in the Transparent Region; VI. Effects of External Stress on Quantum States; V. Summary; VI. Acknowledgments; References
- Chapter 5. Semiconductor Optoelectronic DevicesI. Introduction; II. Experimental Considerations; III. Semiconductor Lasers; IV. Uniaxial Strain Effects: Strained-Layer Lasers; V. Hydrostatic Pressure Measurements of Avalanche Photodiodes: The Band-Structure Dependence of Impact Ionization; VI. Summary; Acknowledgments; References; Chapter 6. The Application of High Nitrogen Pressure in the Physics and Technology of III-N Compounds; I. Introduction; II. Thermal Stability of AIN, GaN, and InN; III. Solubility of N in Liquid Al, Ga, and In
- IV. Kinetic Limitations of Dissolution of Nitrogen in Liquid Al, Ga, and InV. High N2 Pressure Solution Growth of GaN; VI. Physical Properties of Pressure-Grown GaN Crystals; VII. Wet Etching and Surface Preparation; VIII. Homoepitaxy; IX. Conclusions; Acknowledgments; References; Chapter 7. Diamond Anvil Cells in High Pressure Studies of Semiconductors; I. DAC: An Apparatus Par Excellence to Achieve Highest Static Pressure; II. Condensed Matter Physics Techniques Coupled to a DAC; III. High Pressure Studies of Semiconductors; IV. Concluding Remarks; Acknowledgments; References; Index