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High pressure in semiconductor physics. II /
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing n...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
San Diego :
Academic Press,
�1998.
|
| Colección: | Semiconductors and semimetals ;
55. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
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| 050 | 4 | |a QC612.S4 |b S4655 1998eb | |
| 082 | 0 | 4 | |a 621.3815/2 |2 23 |
| 245 | 0 | 0 | |a High pressure in semiconductor physics. |n II / |c volume editors, Tadeusz Suski, William Paul. |
| 260 | |a San Diego : |b Academic Press, |c �1998. | ||
| 300 | |a 1 online resource (xi, 461 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals, |x 0080-8784 ; |v 55 | |
| 504 | |a Includes bibliographical references and indexes. | ||
| 520 | |a Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Volumes 54 and 55 present contributions by leading researchers in the field of high pressure semiconductors. Edited by T. Suski and W. Paul, these volumes continue the tradition of well-known but outdated publications such as Brigman's The Physics of High Pressure (1931 and 1949) and High Pressure Physics and Chemistry edited by Bradley. Volumes 54 and 55 reflect the industrially important recent developments in research and applications of semiconductor properties and behavior under desirable risk-free conditions at high pressures. These developments include the advent of the diamond anvil cell technique and the availability of commercial piston-cylinder apparatus operating at high hydrostatic pressures. These much-needed books will be useful to both researchers and practitioners in applied physics, materials science, and engineering | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; High Pressure in Semiconductor Physics II; Copyright Page; Contents; Preface; List of Contributors; Chapter 1. Parallel Transport in Low-Dimensional Semiconductor Structures; I. Introduction; II. The Effect of Pressure; III. Integer Quantum Hall Effect; IV. Fractional Quantum Hall Effect; V. Magnetophonon Resonance Effect Under Hydrostatic Pressure in GaAs/Al0.28Ga0.72As, Ga0 47 In0.53As/Al0.48In0.48In0.52, and in Ga0.47In0.53As/InP Heterojunctions; Acknowledgments; References | |
| 505 | 8 | |a Chapter 2. Tunneling Under Pressure: High-Pressure Studies of Vertical Transport in Semiconductor HeterostructuresI. Introduction; II. Theory and Calculation; III. Experimental Techniques; IV. High Pressure Studies of Negative Differential Resistance; V. Concluding Remarks; Acknowledgments; References; Chapter 3. Phonons, Strains, and Pressure in Semiconductors; I. Introduction; II. Background; III. Effects of Hydrostatic Pressure on Optical Phonons; IV. Effects of Strains on Optical Phonons; V. Strain Characterization of Heterojunctions and Superlattices; VI. Concluding Remarks | |
| 505 | 8 | |a AcknowledgmentsAppendix; References; Chapter 4. Effects of External Uniaxial Stress on the Optical Properties of Semiconductors and Semiconductor Microstructures; I. Introduction; II. Effects of Homogeneous Deformation on Electronic Energy Levels; III. Determination of Intervalley Electron-Phonon and Hole-Phonon Interactions in Indirect Gap Semiconductors; IV. Piezo-Optical Response of Ge and GaAs in the Opaque Region; V. Intrinsic Piezobirefringence in the Transparent Region; VI. Effects of External Stress on Quantum States; V. Summary; VI. Acknowledgments; References | |
| 505 | 8 | |a Chapter 5. Semiconductor Optoelectronic DevicesI. Introduction; II. Experimental Considerations; III. Semiconductor Lasers; IV. Uniaxial Strain Effects: Strained-Layer Lasers; V. Hydrostatic Pressure Measurements of Avalanche Photodiodes: The Band-Structure Dependence of Impact Ionization; VI. Summary; Acknowledgments; References; Chapter 6. The Application of High Nitrogen Pressure in the Physics and Technology of III-N Compounds; I. Introduction; II. Thermal Stability of AIN, GaN, and InN; III. Solubility of N in Liquid Al, Ga, and In | |
| 505 | 8 | |a IV. Kinetic Limitations of Dissolution of Nitrogen in Liquid Al, Ga, and InV. High N2 Pressure Solution Growth of GaN; VI. Physical Properties of Pressure-Grown GaN Crystals; VII. Wet Etching and Surface Preparation; VIII. Homoepitaxy; IX. Conclusions; Acknowledgments; References; Chapter 7. Diamond Anvil Cells in High Pressure Studies of Semiconductors; I. DAC: An Apparatus Par Excellence to Achieve Highest Static Pressure; II. Condensed Matter Physics Techniques Coupled to a DAC; III. High Pressure Studies of Semiconductors; IV. Concluding Remarks; Acknowledgments; References; Index | |
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a High pressure (Science) | |
| 650 | 2 | |a Semiconductors |0 (DNLM)D012666 | |
| 650 | 6 | |a Semi-conducteurs. |0 (CaQQLa)201-0318258 | |
| 650 | 6 | |a Hautes pressions. |0 (CaQQLa)201-0021306 | |
| 650 | 7 | |a semiconductor. |2 aat |0 (CStmoGRI)aat300015117 | |
| 650 | 7 | |a High pressure (Science) |2 fast |0 (OCoLC)fst00956047 | |
| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 700 | 1 | |a Suski, Tadeusz. | |
| 700 | 1 | |a Paul, William, |d 1926- | |
| 776 | 0 | |z 0127521631 | |
| 830 | 0 | |a Semiconductors and semimetals ; |v 55. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521633 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/55 |z Texto completo |