Cargando…
Strained-layer superlattices : materials science and technology /
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
�1991.
|
| Colección: | Semiconductors and semimetals ;
v. 33. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Strained-Layer Superlattices: Materials Science and Technology; Copyright Page; Contents; LIST OF CONTRIBUTORS; PREFACE; Chapter 1. Principles and Concepts of Strained-Layer Epitaxy; I. Introduction; ll. Growth Techniques; lll. Importance of the Substrate Surface in Heteroepitaxial Growth; IV. Nucleation and Growth Modes; V. Strain Relief of Lattice-Mismatched Epitaxy; VI. Atomic-Scale Structure of Epitaxial Layers; VII. Summary; References; Chapter 2. Device Applications of Strained-Layer Epitaxy; I. Introduction; ll. Properties of Strained Layers
- Lll. Electronic-Device StructuresIV. Optoelectronic-Device Structures; V. Optimized Lattice-Constant Epitaxy; VI. Conclusions; References; Chapter 3. Structure and Characterization of Strained-Layer Superlattices; I. Introduction; ll. Structure; lll. Ion-Scattering Characterization; IV. X-ray Diffraction Characterization; V. Other Characterization Techniques; VI. Stability, Metastability, and Relaxation; VII. Application to Single Strained Layers; VIII. Application to Superlattices; IX. Conclusions; References; Chapter 4. Group-IV Compounds; l. Introduction; ll. Material Properties
- Lll. Basic PrinciplesIV. Stability of Strained-Layer Superlattices; V. The Si1-xGex/Si System; VI. Outlook; References; Chapter 5. Molecular-Beam Epitaxy of IV-Vl Compound Heterojunctions and Superlattices; l. Introduction; ll. Growth by Molecular-Beam Epitaxy; lll. Use of Lattice-Mismatched Substrates; lV. Strained-Layer Superlattices and Heterojunctions; V. Conclusions; Acknowledgments; References; Chapter 6. Molecular-Beam Epitaxy of II-VI Semiconductor Microstructures; I. Introduction; ll. Growth by Molecular-Beam Epitaxy; lll. Use of Lattice-Mismatched Substrates
- IV. Strained-Layer Superlattices and HeterojunctionsV. Conclusions; Acknowledgments; References; INDEX; CONTENTS OF PREVIOUS VOLUMES