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Strained-layer superlattices : materials science and technology /
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
�1991.
|
| Colección: | Semiconductors and semimetals ;
v. 33. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
| LEADER | 00000cam a2200000 a 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn645840978 | ||
| 003 | OCoLC | ||
| 005 | 20231117015153.0 | ||
| 006 | m o d | ||
| 007 | cr bn||||||abp | ||
| 007 | cr bn||||||ada | ||
| 008 | 100702s1991 maua ob 001 0 eng d | ||
| 040 | |a OCLCE |b eng |e pn |c OCLCE |d OCLCQ |d OCLCO |d N$T |d E7B |d OPELS |d IDEBK |d OCLCF |d OCLCQ |d DEBSZ |d OCLCQ |d LEAUB |d VLY |d OCLCQ |d OCLCO |d OCL |d OCLCQ |d OCLCO | ||
| 019 | |a 285443203 |a 646756603 |a 741455457 |a 816847309 |a 823129555 |a 823851694 |a 823922183 |a 824103733 |a 1086550407 |a 1162117030 | ||
| 020 | |a 9780080864303 |q (electronic bk.) | ||
| 020 | |a 0080864309 |q (electronic bk.) | ||
| 020 | |a 1283151588 | ||
| 020 | |a 9781283151580 | ||
| 020 | |a 9786613151582 | ||
| 020 | |a 6613151580 | ||
| 020 | |z 012752133X | ||
| 020 | |z 9780127521336 | ||
| 035 | |a (OCoLC)645840978 |z (OCoLC)285443203 |z (OCoLC)646756603 |z (OCoLC)741455457 |z (OCoLC)816847309 |z (OCoLC)823129555 |z (OCoLC)823851694 |z (OCoLC)823922183 |z (OCoLC)824103733 |z (OCoLC)1086550407 |z (OCoLC)1162117030 | ||
| 042 | |a dlr | ||
| 050 | 4 | |a QC612.S4 |b W5 2, v.33 | |
| 072 | 7 | |a SCI |x 021000 |2 bisacsh | |
| 082 | 0 | 4 | |a 537.6/22 |2 22 |
| 245 | 0 | 0 | |a Strained-layer superlattices : |b materials science and technology / |c volume editor, Thomas P. Pearsall. |
| 260 | |a Boston : |b Academic Press, |c �1991. | ||
| 300 | |a 1 online resource (ix, 431 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals ; |v v. 33 | |
| 504 | |a Includes bibliographical references and index. | ||
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2010. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2010 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 588 | 0 | |a Print version record. | |
| 520 | |a The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices. | ||
| 505 | 0 | |a Front Cover; Strained-Layer Superlattices: Materials Science and Technology; Copyright Page; Contents; LIST OF CONTRIBUTORS; PREFACE; Chapter 1. Principles and Concepts of Strained-Layer Epitaxy; I. Introduction; ll. Growth Techniques; lll. Importance of the Substrate Surface in Heteroepitaxial Growth; IV. Nucleation and Growth Modes; V. Strain Relief of Lattice-Mismatched Epitaxy; VI. Atomic-Scale Structure of Epitaxial Layers; VII. Summary; References; Chapter 2. Device Applications of Strained-Layer Epitaxy; I. Introduction; ll. Properties of Strained Layers | |
| 505 | 8 | |a Lll. Electronic-Device StructuresIV. Optoelectronic-Device Structures; V. Optimized Lattice-Constant Epitaxy; VI. Conclusions; References; Chapter 3. Structure and Characterization of Strained-Layer Superlattices; I. Introduction; ll. Structure; lll. Ion-Scattering Characterization; IV. X-ray Diffraction Characterization; V. Other Characterization Techniques; VI. Stability, Metastability, and Relaxation; VII. Application to Single Strained Layers; VIII. Application to Superlattices; IX. Conclusions; References; Chapter 4. Group-IV Compounds; l. Introduction; ll. Material Properties | |
| 505 | 8 | |a Lll. Basic PrinciplesIV. Stability of Strained-Layer Superlattices; V. The Si1-xGex/Si System; VI. Outlook; References; Chapter 5. Molecular-Beam Epitaxy of IV-Vl Compound Heterojunctions and Superlattices; l. Introduction; ll. Growth by Molecular-Beam Epitaxy; lll. Use of Lattice-Mismatched Substrates; lV. Strained-Layer Superlattices and Heterojunctions; V. Conclusions; Acknowledgments; References; Chapter 6. Molecular-Beam Epitaxy of II-VI Semiconductor Microstructures; I. Introduction; ll. Growth by Molecular-Beam Epitaxy; lll. Use of Lattice-Mismatched Substrates | |
| 505 | 8 | |a IV. Strained-Layer Superlattices and HeterojunctionsV. Conclusions; Acknowledgments; References; INDEX; CONTENTS OF PREVIOUS VOLUMES | |
| 546 | |a English. | ||
| 650 | 0 | |a Superlattices as materials. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a Epitaxy. | |
| 650 | 2 | |a Semiconductors |0 (DNLM)D012666 | |
| 650 | 6 | |a Superr�eseaux. |0 (CaQQLa)201-0202692 | |
| 650 | 6 | |a �Epitaxie. |0 (CaQQLa)201-0077948 | |
| 650 | 6 | |a Semi-conducteurs. |0 (CaQQLa)201-0318258 | |
| 650 | 7 | |a semiconductor. |2 aat |0 (CStmoGRI)aat300015117 | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a Epitaxy |2 fast |0 (OCoLC)fst00914372 | |
| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 650 | 7 | |a Superlattices as materials |2 fast |0 (OCoLC)fst01138901 | |
| 650 | 7 | |a Semiconducteurs. |2 ram | |
| 650 | 7 | |a Superr�eseaux (Mat�eriaux) |2 ram | |
| 700 | 1 | |a Pearsall, T. P. | |
| 776 | 0 | 8 | |i Print version: |t Strained-layer superlattices. |d Boston : Academic Press, �1991 |w (OCoLC)22994482 |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 33. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521336 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/33 |z Texto completo |