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Semiconductor opto-electronics /
Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the int...
| Clasificación: | Libro Electrónico |
|---|---|
| Autores principales: | , , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
London :
Butterworths,
1973.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Semiconductor Opto-Electronics; Copyright Page; PREFACE; UNITS; Table of Contents; Chapter 1. OPTICAL CONSTANTS OF SOLIDS; 1.1 ELECTROMAGNETIC WAVES; 1.2 BEHAVIOUR AT AN INTERFACE; 1.3 REFLECTION AT AN AIR/CONDUCTOR SURFACE; 1.4 REFRACTION AT AN AIR/CONDUCTOR SURFACE; 1.5 MULTIPLE REFLECTIONS IN THIN FILMS; 1.6 INTERFERENCE EFFECTS IN SEMICONDUCTOR LASERS; Chapter 2. DISPERSION THEORY; 2.1 CLASSICAL THEORY OF DISPERSION IN DIELECTRICS; 2.2 BEHAVIOUR OF A SINGLE CLASSICAL OSCILLATOR; 2.3 QUANTUM-MECHANICAL THEORY OF DISPERSION; 2.4 INTER-RELATION OF OPTICAL CONSTANTS.
- 2.5 FREE-CARRIER ABSORPTION AND DISPERSION2.6 PLASMA-EDGE REFLECTION; Chapter 3. ABSORPTION PROCESSES IN SEMICONDUCTORS; 3.1 ABSORPTION AND REFLECTION SPECTRA; 3.2 DIRECT OPTICAL TRANSITIONS; 3.3 INDIRECT TRANSITIONS; 3.4 ABSORPTION DUE TO EXCITONS; 3.5 PRESSURE AND TEMPERATURE DEPENDENCE OF THE ABSORPTION EDGE; 3.6 ABSORPTION AND REFLECTION IN AN ELECTRIC FIELD; 3.7 ABSORPTION IN HEAVILY DOPED SEMICONDUCTORS; 3.8 ABSORPTION BY LOCALISED IMPURITIES; Chapter 4. MAGNETO-OPTICAL EFFECTS; 4.1 ELECTRONS IN A MAGNETIC FIELD; 4.2 FREE-CARRIER MAGNETO-OPTICS.
- 4.3 QUANTUM-MECHANICAL DESCRIPTION OF ENERGY STATES IN A MAGNETIC FIELD4.4 MISCELLANEOUS CYCLOTRON-RESONANCE EFFECTS; 4.5 EFFECT OF A MAGNETIC FIELD ON STATES IN THE FORBIDDEN GAP; Chapter 5. PHOTO-EFFECTS; 5.1 INTRODUCTION; 5.2 TRANSPORT EQUATIONS WITH OPTICAL GENERATION; 5.3 PHOTO-DIFFUSION EFFECTS; 5.4 PHOTOCONDUCTIVITY (PC); 5.5 PHOTO-ELECTRO-MAGNETIC EFFECT (PEM); 5.6 RECOMBINATION; 5.7 PHOTOVOLTAIC EFFECTS (PV); 5.8 EXTERNAL PHOTOEMISSION OF ELECTRONS; 5.9 PHOTON PRESSURE EFFECTS (PHOTON DRAG); Chapter 6. SEMICONDUCTOR PHOTODETECTORS; 6.1 GENERAL CONSIDERATIONS; 6.2 FIGURES OF MERIT.
- 6.3 NOISE IN PHOTODETECTORS6.4 PHOTOCONDUCTIVE DETECTORS; 6.5 PHOTOVOLTAIC DETECTORS; 6.6 PEM-EFFECT DETECTORS; 6.7 PHOTOCONDUCTIVE GAIN; 6.8 SOLAR CELLS; Chapter 7. EMISSION OF RADIATION FROM SEMICONDUCTORS; 7.1 EMISSION PROCESSES IN SEMICONDUCTORS; 7.2 EMISSIVITY OF THERMAL RADIATION; 7.3 INTERBAND RADIATIVE RECOMBINATION; 7.4 RADIATIVE RECOMBINATION AT LOCALISED ENERGY STATES; 7.5 NON-RADIATIVE RECOMBINATION PROCESSES; Chapter 8. SEMICONDUCTOR LASERS AND LAMPS; 8.1 PHYSICAL PROCESSES IN SEMICONDUCTOR LASERS; 8.2 INJECTION AND RECOMBINATION AT p-n JUNCTIONS.
- 8.3 INTERDEPENDENCE OF SPONTANEOUS-AND STIMULATED-EMISSION RATES8.4 EVALUATION OF THE GAIN COEFFICIENT AND THE SPONTANEOUS-EMISSION RATE; 8.5 CONDITIONS FOR OSCILLATION IN INJECTION LASERS; 8.6 QUANTUM EFFICIENCY OF THE INJECTION LASER; 8.7 CLOSE-CONFINEMENT LASERS; 8.8 THE POTENTIAL OF INDIRECT-GAP SEMICONDUCTORS AS LASER MATERIALS; 8.9 LIGHT-EMITTING DIODES; Chapter 9. NON-LINEAR OPTICAL EFFECTS; 9.1 INTRODUCTION; 9.2 QUADRATIC POLARISATION EFFECTS; 9.3 CUBIC POLARISATION EFFECTS; 9.4 GENERATION OF A NEW ELECTROMAGNETIC WAVE; Chapter 10. GROUP IV SEMICONDUCTORS; 10.1 INTRODUCTION.