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III-V semiconductor materials and devices /
The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V dev...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam ; New York : New York, NY USA :
North-Holland ; Sole distributors for the USA and Canada, Elsevier Science Pub. Co.,
1989.
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| Colección: | Materials processing, theory and practices ;
v. 7. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; III-V Semiconductor Materials and Devices; Copyright Page; Introduction to the Series; Previous Volumes in The Series; Preface to Volume 7; Table of Contents; ADVISORY BOARD; CHAPTER 1. MELT-GROWTH OF III-V COMPOUNDS BY THE LIQUID ENCAPSULATION AND HORIZONTAL GROWTH TECHNIQUES; 1. Introduction; 2. Melt-growth techniques; 3. Liquid Encapsulation; 4. Horizontal growth; 5. Fundamentals of crystal growth; 6. Crystal quality; Note added in proof; Acknowledgements; References; CHAPTER 2. LIQUID PHASE EPITAXIAL GROWTH; 1. Introduction; 2. Apparatus for multiple-layer LPE
- 3. Growth of GaAs- AlxGa1-xAs layers4. LPE growth of GalnAsP; References; CHAPTER 3. VAPOR PHASE EPITAXY OF III- V SEMICONDUCTORS; 1. Introduction; 2. Basic system parameters; 3. System processes; 4. System parameter effects; 5. III-V alloys; 6. Summary; References; CHAPTER 4. METALORGANIC CHEMICAL VAPOR DEPOSITION OF III -V SEMICONDUCTORS; 1. Introduction; 2. MOCVD growth processes-basic reactions; 3. AlAs-GaAs materials growth by MOCVD; 4. The InGaAsP materials systems; 5. Other materials systems; 6. Heterostructure devices by MOCVD; 7. Future directions; Acknowledgments; References
- CHAPTER 5. MOLECULAR BEAM EPITAXY1. Introduction; 2. MBE systems
- components and their functions; 3. Growth processes and procedures of GaAs and related compounds; 4. Characterization of MBE-grown GaAs, (AlGa)As, and their heterostructures; 5. Growth and properties of various material systems; 6. Concluding remarks and future challenges; Note to the reference list; References; CHAPTER 6. ION IMPLANTATION IN III-V SEMICONDUCTORS; 1. Introduction; 2. General considerations; 3. Parameters that affect implantation results; 4. n-type impurities; 5. p-type impurities; 6. High-resistivity layers
- 7. Applications8. Conclusions; Acknowledgments; References; CHAPTER 7. CHARACTERIZATION OF III-V SEMICONDUCTORS; 1. Introduction; 2. Optical characterization; 3. Electrical characterization; Note added in proof:; Acknowledgments; References; CHAPTER 8. III-V SEMICONDUCTOR DEVICES; 1. Introduction and material selection; 2. Principles used in devices; 3. Electronic devices; 4. Opto-electronic devices; 5. Sensors; References; References added in proof; SUBJECT INDEX