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Compound semiconductor device physics /
This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytic...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
�1992.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Compound Semiconductor Device Physics; Copyright Page; Table of Contents; Preface; Chapter 1. Introduction; 1.1 Outline of the Book; 1.2 Suggested Usage; 1.3 Comments on Nomenclature; Chapter 2. Review of Semiconductor Physics, Properties, and Device Implications; 2.1 Introduction; 2.2 Electrons, Holes, and Phonons; 2.3 Occupation Statistics; 2.4 Band Structure; 2.5 Phonon Dispersion in Semiconductors; 2.6 Scattering of Carriers; 2.7 Carrier Transport; 2.8 Some Effects Related to Energy Bands; 2.9 Summary; General References; Problems; Chapter 3. Mathematical Treatments.
- 3.1 Introduction3.2 Kinetic Approach; 3.3 Boltzmann Transport Approach; 3.4 Monte Carlo Transport Approach; 3.5 Drift-Diffusion Transport; 3.6 Boundary Conditions; 3.7 Generation and Recombination; 3.8 Summary; General References; Problems; Chapter 4. Transport Across Junctions; 4.1 Introduction; 4.2 Metal-Semiconductor Junctions; 4.3 Het ero junctions; 4.4 Ohmic Contacts; 4.5 p-n Junctions; 4.6 Summary; General References; Problems; Chapter 5. Metal-Semiconductor Field Effect Transistors; 5.1 Introduction; 5.2 Analytic Quasi-Static Models; 5.3 Constant Mobility with Saturated Velocity Model.
- 5.4 Accumulation-Depletion of Carriers5.5 Sub-Threshold and Substrate Injection Effects; 5.6 Sidegating Effects; 5.7 Piezoelectric Effects; 5.8 Signal Delay along the Gate; 5.9 Small-Signal High Frequency Models; 5.10 Limit Frequencies; 5.11 Transient Analysis; 5.12 Off-Equilibrium Effects; 5.13 Summary; General References; Problems; Chapter 6. Insulator and Heterostructure Field Effect Transistors; 6.1 Introduction; 6.2 Heterostructures; 6.3 Strained Heterostructures; 6.4 Band Discontinuities; 6.5 Band Bending and Subband Formation; 6.6 Channel Control in HFETs.
- 6.7 Quasi-Static Insulator FET Analysis6.8 HFET Analysis; 6.9 Quasi-Static Circuit Refinements; 6.10 Small-Signal Analysis; 6.11 Transient Analysis; 6.12 Hot Carrier Injection Effects; 6.13 Effects Due to DX Centers; 6.14 Off-Equilibrium Effects; 6.15 p-channel Field Effect Transistors; 6.16 Summary; General References; Problems; Chapter 7. Heterostructure Bipolar Transistors; 7.1 Introduction; 7.2 Quasi-Static Analysis; 7.3 Heterostructure Implications; 7.4 High Current Considerations; 7.5 Generation and Recombination Effects; 7.6 Small-Signal Analysis.
- 7.7 Small-Signal Effects of Alloy Grading7.8 Transit Time Resonance Effects; 7.9 Transient Analysis; 7.10 Off-Equilibrium Effects; 7.11 Summary; General References; Problems; Chapter 8. Hot Carrier and Tunneling Structures; 8.1 Introduction; 8.2 Quantum-Mechanical Reflections; 8.3 Hot Carrier Structures; 8.4 Resonant and Sequential Tunneling; 8.5 Transistors with Coupled Barrier Tunneling; 8.6 Summary; General References; Problems; Chapter 9. Scaling and Operational Limitations; 9.1 Introduction; 9.2 Operational Generalities; 9.3 General Scaling Considerations.