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Compound semiconductor device physics /
This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytic...
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
�1992.
|
| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 020 | |z 9780126917406 |q (alk. paper) | ||
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| 100 | 1 | |a Tiwari, Sandip, |d 1955- | |
| 245 | 1 | 0 | |a Compound semiconductor device physics / |c Sandip Tiwari. |
| 260 | |a Boston : |b Academic Press, |c �1992. | ||
| 300 | |a 1 online resource (xvi, 828 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2010. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2010 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Compound Semiconductor Device Physics; Copyright Page; Table of Contents; Preface; Chapter 1. Introduction; 1.1 Outline of the Book; 1.2 Suggested Usage; 1.3 Comments on Nomenclature; Chapter 2. Review of Semiconductor Physics, Properties, and Device Implications; 2.1 Introduction; 2.2 Electrons, Holes, and Phonons; 2.3 Occupation Statistics; 2.4 Band Structure; 2.5 Phonon Dispersion in Semiconductors; 2.6 Scattering of Carriers; 2.7 Carrier Transport; 2.8 Some Effects Related to Energy Bands; 2.9 Summary; General References; Problems; Chapter 3. Mathematical Treatments. | |
| 505 | 8 | |a 3.1 Introduction3.2 Kinetic Approach; 3.3 Boltzmann Transport Approach; 3.4 Monte Carlo Transport Approach; 3.5 Drift-Diffusion Transport; 3.6 Boundary Conditions; 3.7 Generation and Recombination; 3.8 Summary; General References; Problems; Chapter 4. Transport Across Junctions; 4.1 Introduction; 4.2 Metal-Semiconductor Junctions; 4.3 Het ero junctions; 4.4 Ohmic Contacts; 4.5 p-n Junctions; 4.6 Summary; General References; Problems; Chapter 5. Metal-Semiconductor Field Effect Transistors; 5.1 Introduction; 5.2 Analytic Quasi-Static Models; 5.3 Constant Mobility with Saturated Velocity Model. | |
| 505 | 8 | |a 5.4 Accumulation-Depletion of Carriers5.5 Sub-Threshold and Substrate Injection Effects; 5.6 Sidegating Effects; 5.7 Piezoelectric Effects; 5.8 Signal Delay along the Gate; 5.9 Small-Signal High Frequency Models; 5.10 Limit Frequencies; 5.11 Transient Analysis; 5.12 Off-Equilibrium Effects; 5.13 Summary; General References; Problems; Chapter 6. Insulator and Heterostructure Field Effect Transistors; 6.1 Introduction; 6.2 Heterostructures; 6.3 Strained Heterostructures; 6.4 Band Discontinuities; 6.5 Band Bending and Subband Formation; 6.6 Channel Control in HFETs. | |
| 505 | 8 | |a 6.7 Quasi-Static Insulator FET Analysis6.8 HFET Analysis; 6.9 Quasi-Static Circuit Refinements; 6.10 Small-Signal Analysis; 6.11 Transient Analysis; 6.12 Hot Carrier Injection Effects; 6.13 Effects Due to DX Centers; 6.14 Off-Equilibrium Effects; 6.15 p-channel Field Effect Transistors; 6.16 Summary; General References; Problems; Chapter 7. Heterostructure Bipolar Transistors; 7.1 Introduction; 7.2 Quasi-Static Analysis; 7.3 Heterostructure Implications; 7.4 High Current Considerations; 7.5 Generation and Recombination Effects; 7.6 Small-Signal Analysis. | |
| 505 | 8 | |a 7.7 Small-Signal Effects of Alloy Grading7.8 Transit Time Resonance Effects; 7.9 Transient Analysis; 7.10 Off-Equilibrium Effects; 7.11 Summary; General References; Problems; Chapter 8. Hot Carrier and Tunneling Structures; 8.1 Introduction; 8.2 Quantum-Mechanical Reflections; 8.3 Hot Carrier Structures; 8.4 Resonant and Sequential Tunneling; 8.5 Transistors with Coupled Barrier Tunneling; 8.6 Summary; General References; Problems; Chapter 9. Scaling and Operational Limitations; 9.1 Introduction; 9.2 Operational Generalities; 9.3 General Scaling Considerations. | |
| 520 | |a This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter. | ||
| 650 | 0 | |a Compound semiconductors. | |
| 650 | 0 | |a Semiconductors. | |
| 650 | 6 | |a Compos�es semi-conducteurs. |0 (CaQQLa)201-0286429 | |
| 650 | 6 | |a Semi-conducteurs. |0 (CaQQLa)201-0318258 | |
| 650 | 7 | |a semiconductor. |2 aat |0 (CStmoGRI)aat300015117 | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a SCIENCE |x Physics |x Electromagnetism. |2 bisacsh | |
| 650 | 7 | |a Compound semiconductors |2 fast |0 (OCoLC)fst00871813 | |
| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 650 | 7 | |a Semiconducteurs. |2 ram | |
| 653 | 0 | |a Semiconductors | |
| 776 | 0 | 8 | |i Print version: |a Tiwari, Sandip, 1955- |t Compound semiconductor device physics. |d Boston : Academic Press, �1992 |w (DLC) 91017270 |w (OCoLC)23767600 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780126917406 |z Texto completo |