Non-stoichiometry in semiconductors : proceedings of Symposium A3 on Non-Stoichiometry in Semiconductors of the International Conference on Advanced Materials--ICAM 91, Strasbourg, France, 27-31 May, 1991 /

Significant advances have occurred in the theory of non-stoichiometry problems and fundamentally new and wide-ranging applications have been developed, helping to better identify relevant issues. The contributions in this volume bring together the experience of specialists from different disciplines...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autores Corporativos: Symposium A3 on Non-Stoichiometry in Semiconductors Strasbourg, France, International Conference on Advanced Materials
Otros Autores: Bachmann, K. J., Hwang, H.-L, Schwab, C.
Formato: Electrónico Congresos, conferencias eBook
Idioma:Inglés
Publicado: Amsterdam ; New York : North-Holland, 1992.
Temas:
Compound semiconductors > Congresses.
Stoichiometry > Congresses.
Point defects > Congresses.
Compos�es semi-conducteurs > Congr�es.
St�chiom�etrie > Congr�es.
D�efauts ponctuels > Congr�es.
TECHNOLOGY & ENGINEERING > Electronics > Semiconductors.
TECHNOLOGY & ENGINEERING > Electronics > Solid State.
Compound semiconductors
Point defects
Stoichiometry
Semiconductors
Congress
proceedings (reports)
Conference papers and proceedings
Conference papers and proceedings.
Actes de congr�es.
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover; Non-Stoichiometry in Semiconductors; Copyright Page; Preface; Symposium Information; Table of Contents; Part I: Experimental Methods for the Determination of Non-Stoichiometry; Chapter 1. Chemical composition and properties of semiconductors; Abstract; 1. INTRODUCTION; 2. PRINCIPLES; 3. DETERMINATIONS AT ROOM TEMPERATURE; 4. DETERMINATIONS AT HIGH TEMPERATURES; 5. CONCLUSION; 6. REFERENCES; CHAPTER 2. PRECISE COMPOSITIONAL AND TRACE-ELEMENTAL ANALYSIS BY CHEMICAL METHODS IN COMPOUND SEMICONDUCTORS; Abstract; 1. INTRODUCTION; 2. COMPOSITION ANALYSIS; 3. TRACE ELEMENT ANALYSIS
  • 4. REFERENCESChapter 3. Non-stoichiometry and aspects of heavy doping in GaAs revealed by X-ray quasi-forbidden reflection (XFR) method; Abstract; 1. Introduction; 2. Principle of measurement; 3. Non-stoichiometry of GaAs; 4. Aspects of heavy doping; 5. Possibilities of the application of the XFR to other compounds; 6. Summary; Acknowledgement; References; CHAPTER 4. CRYSTAL QUALITY CONTROL BY MEANS OF THE COMBINED USE OF X-RAY DIFFRACTION AND ULTRASOUND; Abstract; 1. INTRODUCTION; 2. EXPERIMENTAL RESULTS; REFERENCES; Part II: Phase Relations and Point Defect Equilibria
  • 3. Results and discussion4. References; Chapter 8. Defect structure of the nonstoichiometric Cu-I-III-VI2 chalcopyrite semiconductors; Abstract; 1. INTRODUCTION; 2. NONSTOICHIOMETRY AND STRUCTURE DISORDER; 3. Defect chemistry of CuMX2 semiconductors; 4. ANALYSIS OF DEFECT STRUCTURES; 5. CONCLUSION; 6. REFERENCES; CHAPTER 9. INFLUENCE OF ANNEALING METHOD ON ELECTRICAL PROPERTIES OF Hg1-XCdxTe; Abstract; 1. INTRODUCTION; 2. EXPERIMENT; 3. RESULTS; 4. DISCUSSION; 5. CONCLUSION; 6. REFERENCES; Chapter 10. Defect Chemistry and Electrical Properties of Iron-pyrite (FeS2-x); Abstract
  • 1. INTRODUCTION2. EXPERIMENTAL; 3. RESULTS; 4. DISCUSSION; 5. CONCLUSION; 6. ACKNOWLEDGEMENT; 7. REFERENCES; Part III: Stoichiometry Control in Melt and Solution Growth; Chapter 11. Stoichiometry control of compound semiconductor crystals; Abstract; 1. Introduction; 2. Annealing of GaAs under arsenic vapor pressure; 3. LPE growth by the TDM-CVP; 4. Exess As atoms in GaAs; 5. Application of vapor pressure control method to the fabrication of semiconductor devices; 6. Summary; 7. References; Chapter 12. Modified LEC technique for growing high quality III-V Semiconductors; Abstract

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