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Non-stoichiometry in semiconductors : proceedings of Symposium A3 on Non-Stoichiometry in Semiconductors of the International Conference on Advanced Materials--ICAM 91, Strasbourg, France, 27-31 May, 1991 /
Significant advances have occurred in the theory of non-stoichiometry problems and fundamentally new and wide-ranging applications have been developed, helping to better identify relevant issues. The contributions in this volume bring together the experience of specialists from different disciplines...
| Clasificación: | Libro Electrónico |
|---|---|
| Autores Corporativos: | , |
| Otros Autores: | , , |
| Formato: | Electrónico Congresos, conferencias eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam ; New York :
North-Holland,
1992.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 111 | 2 | |a Symposium A3 on Non-Stoichiometry in Semiconductors |d (1991 : |c Strasbourg, France) | |
| 245 | 1 | 0 | |a Non-stoichiometry in semiconductors : |b proceedings of Symposium A3 on Non-Stoichiometry in Semiconductors of the International Conference on Advanced Materials--ICAM 91, Strasbourg, France, 27-31 May, 1991 / |c edited by K.J. Bachmann, H.-L. Hwang, C. Schwab. |
| 260 | |a Amsterdam ; |a New York : |b North-Holland, |c 1992. | ||
| 300 | |a 1 online resource (xiv, 322 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
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| 504 | |a Includes bibliographical references and index. | ||
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| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2010 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 520 | |a Significant advances have occurred in the theory of non-stoichiometry problems and fundamentally new and wide-ranging applications have been developed, helping to better identify relevant issues. The contributions in this volume bring together the experience of specialists from different disciplines (materials scientists, physicists, chemists and device people) confronted with non-stoichiometry problems. The 40 papers, including 9 invited papers, give an advanced scenario of this wide interdisciplinary area, which is highly important in its diverse aspects of theory, implementation and applications. This work will be of interest not only to universities and laboratories engaged in studies and research in this field, but also to organizations and industrial centres concerned with implementations and applications. The diversity of the topics, as well as the extraordinary tempo in which Non-stoichiometry in Semiconductors has progressed in recent years attest to the permanent vitality of this field of research and development. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Non-Stoichiometry in Semiconductors; Copyright Page; Preface; Symposium Information; Table of Contents; Part I: Experimental Methods for the Determination of Non-Stoichiometry; Chapter 1. Chemical composition and properties of semiconductors; Abstract; 1. INTRODUCTION; 2. PRINCIPLES; 3. DETERMINATIONS AT ROOM TEMPERATURE; 4. DETERMINATIONS AT HIGH TEMPERATURES; 5. CONCLUSION; 6. REFERENCES; CHAPTER 2. PRECISE COMPOSITIONAL AND TRACE-ELEMENTAL ANALYSIS BY CHEMICAL METHODS IN COMPOUND SEMICONDUCTORS; Abstract; 1. INTRODUCTION; 2. COMPOSITION ANALYSIS; 3. TRACE ELEMENT ANALYSIS | |
| 505 | 8 | |a 4. REFERENCESChapter 3. Non-stoichiometry and aspects of heavy doping in GaAs revealed by X-ray quasi-forbidden reflection (XFR) method; Abstract; 1. Introduction; 2. Principle of measurement; 3. Non-stoichiometry of GaAs; 4. Aspects of heavy doping; 5. Possibilities of the application of the XFR to other compounds; 6. Summary; Acknowledgement; References; CHAPTER 4. CRYSTAL QUALITY CONTROL BY MEANS OF THE COMBINED USE OF X-RAY DIFFRACTION AND ULTRASOUND; Abstract; 1. INTRODUCTION; 2. EXPERIMENTAL RESULTS; REFERENCES; Part II: Phase Relations and Point Defect Equilibria | |
| 505 | 8 | |a 3. Results and discussion4. References; Chapter 8. Defect structure of the nonstoichiometric Cu-I-III-VI2 chalcopyrite semiconductors; Abstract; 1. INTRODUCTION; 2. NONSTOICHIOMETRY AND STRUCTURE DISORDER; 3. Defect chemistry of CuMX2 semiconductors; 4. ANALYSIS OF DEFECT STRUCTURES; 5. CONCLUSION; 6. REFERENCES; CHAPTER 9. INFLUENCE OF ANNEALING METHOD ON ELECTRICAL PROPERTIES OF Hg1-XCdxTe; Abstract; 1. INTRODUCTION; 2. EXPERIMENT; 3. RESULTS; 4. DISCUSSION; 5. CONCLUSION; 6. REFERENCES; Chapter 10. Defect Chemistry and Electrical Properties of Iron-pyrite (FeS2-x); Abstract | |
| 505 | 8 | |a 1. INTRODUCTION2. EXPERIMENTAL; 3. RESULTS; 4. DISCUSSION; 5. CONCLUSION; 6. ACKNOWLEDGEMENT; 7. REFERENCES; Part III: Stoichiometry Control in Melt and Solution Growth; Chapter 11. Stoichiometry control of compound semiconductor crystals; Abstract; 1. Introduction; 2. Annealing of GaAs under arsenic vapor pressure; 3. LPE growth by the TDM-CVP; 4. Exess As atoms in GaAs; 5. Application of vapor pressure control method to the fabrication of semiconductor devices; 6. Summary; 7. References; Chapter 12. Modified LEC technique for growing high quality III-V Semiconductors; Abstract | |
| 546 | |a English. | ||
| 650 | 0 | |a Compound semiconductors |v Congresses. | |
| 650 | 0 | |a Stoichiometry |v Congresses. | |
| 650 | 0 | |a Point defects |v Congresses. | |
| 650 | 6 | |a Compos�es semi-conducteurs |0 (CaQQLa)201-0286429 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 6 | |a St�chiom�etrie |0 (CaQQLa)201-0181147 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 6 | |a D�efauts ponctuels |0 (CaQQLa)201-0022123 |v Congr�es. |0 (CaQQLa)201-0378219 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Semiconductors. |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Electronics |x Solid State. |2 bisacsh | |
| 650 | 7 | |a Compound semiconductors |2 fast |0 (OCoLC)fst00871813 | |
| 650 | 7 | |a Point defects |2 fast |0 (OCoLC)fst01068101 | |
| 650 | 7 | |a Stoichiometry |2 fast |0 (OCoLC)fst01133749 | |
| 653 | 0 | |a Semiconductors | |
| 655 | 2 | |a Congress |0 (DNLM)D016423 | |
| 655 | 7 | |a proceedings (reports) |2 aat |0 (CStmoGRI)aatgf300027316 | |
| 655 | 7 | |a Conference papers and proceedings |2 fast |0 (OCoLC)fst01423772 | |
| 655 | 7 | |a Conference papers and proceedings. |2 lcgft | |
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| 700 | 1 | |a Bachmann, K. J. | |
| 700 | 1 | |a Hwang, H.-L. | |
| 700 | 1 | |a Schwab, C. | |
| 711 | 2 | |a International Conference on Advanced Materials |d (1991 : |c Strasbourg, France) | |
| 776 | 0 | 8 | |i Print version: |a Symposium A3 on Non-Stoichiometry in Semiconductors (1991 : Strasbourg, France). |t Non-stoichiometry in semiconductors. |d Amsterdam ; New York : North-Holland, 1992 |w (DLC) 91042718 |w (OCoLC)25008045 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780444893550 |z Texto completo |