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Ion implantation and beam processing /
Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semicond...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Sydney ; New York :
Academic Press,
1984.
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| Temas: | |
| Acceso en línea: | Texto completo |
MARC
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| 020 | |z 0127569804 | ||
| 020 | |z 9780127569802 | ||
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| 050 | 4 | |a QC702.7.I55 |b I58 1984 | |
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| 245 | 0 | 0 | |a Ion implantation and beam processing / |c edited by J.S. Williams, J.M. Poate. |
| 260 | |a Sydney ; |a New York : |b Academic Press, |c 1984. | ||
| 300 | |a 1 online resource (xi, 419 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index. | ||
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2010. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2010 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Introduction to implantation and beam processing / J.S. Williams, J.M. Poate -- Amorphization and crystallization of semiconductors / J.M. Poate, J.S. Williams -- Applications of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets / J.F. Gibbons, L.A. Christel -- High energy density collision cascades and spike effects / J.A. Davies -- Implantation of insulators: ices and lithographic materials / W.L. Brown -- Ion-bombardment-induced composition changes in alloys and compounds / Hans Henrik Andersen -- Ion beam and laser mixing: fundamentals and applications / B.R. Appleton -- High-does implantation / D.G. Beanland -- Trends of ion implantation in silicon technology / H.S. Rupprecht, A.E. Michel -- Implantation in Ga AS technology / F.H. Eisen -- Contracts and interconnections on semiconductors / J.E.E. Baglin, H.B. Harrison, J.L. Tandon [and others]. | |
| 520 | |a Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Ion implantation. | |
| 650 | 0 | |a Ion bombardment. | |
| 650 | 0 | |a Semiconductor doping. | |
| 650 | 0 | |a Electron beams. | |
| 650 | 6 | |a Ions |x Implantation. |0 (CaQQLa)201-0072132 | |
| 650 | 6 | |a Bombardement ionique. |0 (CaQQLa)201-0004234 | |
| 650 | 6 | |a Semi-conducteurs |x Dopage. |0 (CaQQLa)201-0318260 | |
| 650 | 6 | |a Faisceaux �electroniques. |0 (CaQQLa)201-0004712 | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a Electron beams |2 fast |0 (OCoLC)fst00906654 | |
| 650 | 7 | |a Ion bombardment |2 fast |0 (OCoLC)fst00978567 | |
| 650 | 7 | |a Ion implantation |2 fast |0 (OCoLC)fst00978590 | |
| 650 | 7 | |a Semiconductor doping |2 fast |0 (OCoLC)fst01112124 | |
| 650 | 7 | |a Ionenimplantation |2 gnd |0 (DE-588)4027606-5 | |
| 653 | |a Semiconductors |a Implantation of ions | ||
| 700 | 1 | |a Williams, James S. |q (James Stanislaus), |d 1948- | |
| 700 | 1 | |a Poate, J. M. | |
| 776 | 0 | 8 | |i Print version: |t Ion implantation and beam processing. |d Sydney ; New York : Academic Press, 1984 |w (DLC) 83071159 |w (OCoLC)10958087 |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127569802 |z Texto completo |