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Solid-state devices and applications.

Solid-State Devices and Applications is an introduction to the solid-state theory and its devices and applications. The book also presents a summary of all major solid-state devices available, their theory, manufacture, and main applications. The text is divided into three sections. The first part d...

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Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Lewis, Rhys
Formato: Electrónico eBook
Idioma:Inglés
Publicado: London : Newnes-Butterworths, 1971.
Temas:
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover; Solid-State Devices and Applications; Copyright Page ; Table of Contents; Preface; CHAPTER 1 Semiconductor Fundamentals; 1.1 Introduction; 1.2 Fundamentals of atomic theory; 1.3 Crystal structures and doping; 1.4 Behaviour of doped materials; 1.5 pn junctions; 1.6 Energy-band diagrams for pn junctions; 1.7 Manufacturing techniques; CHAPTER 2. Diodes; 2.1 Introduction; 2.2 Basic techniques; 2.3 Diode ratings; 2.4 Point-contact diodes; 2.5 Varactor diodes and tuning diodes; 2.6 Voltage-regulator diodes; 2.7 Photodiodes; 2.8 Tunnel and backward diodes; 2.9 Gunn diodes.
  • 2.10 Current-regulator diodes2.11 Shockley diodes; 2.12 Planar and planar epitaxial diodes; CHAPTER 3. Bipolar Transistors; 3.1 Fundamental theory; 3.2 Quantity symbols; 3.3 Modes of operation; 3.4 Transistor characteristics; 3.5 Leakage current; 3.6 Transistor types; 3.7 The grown-junction transistor; 3.8 Alloy-junction transistors; 3.9 Alloy-diffused transistors; 3.10 Double-diffused transistors; 3.11 Epitaxial techniques; 3.12 Planar transistors; 3.13 Other bipolar devices; 3.14 The phototransistor; 3.15 The unijunction transistor; 3.16 The tetrode transistor; 3.17 The thyristor.
  • CHAPTER 4. Unipolar Transistors4.1 Introduction; 4.2 Basic principles; 4.3 Comparison of types of f.e.t.; 4.4 Comparison of unipolar and bipolar transistors; 4.5 Quantity symbols; 4.6 Modes of operation; 4.7 Characteristics; 4.8 Temperature stability; 4.9 Physical structures; 4.10 Developments of the f.e.t.; CHAPTER 5. Integrated Circuits; 5.1 Introduction; 5.2 Market categories; 5.3 Digital integrated circuits; 5.4 Linear (analogue) integrated circuits; 5.5 Manufacturing techniques; 5.6 Film techniques; 5.7 Passive and active components in film circuits; 5.8 Advantages of film circuits.
  • 5.9 Monolithic techniques5.10 Passive and active components in monolithic circuits; 5.11 Advantages of monolithic circuits; 5.12 Future developments; CHAPTER 6. Amplifier Fundamentals; 6.1 Introduction; 6.2 Modes of operation; 6.3 Bipolar circuits; 6.4 Unipolar circuits; 6.5 Phase shift in resistance-loaded amplifiers; 6.6 Basic design processes and considerations; 6.7 Biasing considerations for c.e. amplifier circuits; 6.8 Biasing considerations for c.s. stages; 6.9 The emitter follower; 6.10 The source follower; CHAPTER 7. Audio- and Radio- Frequency Amplifiers.
  • 7.1 Audio amplifiers: introduction7.2 Large- and small-signal parameters; 7.3 Choice of mode; 7.4 Coupling techniques for a.f. amplifiers; 7.5 Feedback techniques; 7.6 Classes of bias; 7.7 Push-pull output circuits and driver stages; 7.8 Temperature considerations for power stages; 7.9 Unipolar transistors in a.f. amplifiers; 7.10 Radio-frequency amplifiers: Introduction; 7.11 Coupling techniques for r.f. amplifiers; 7.12 Unilateralisation and neutralisation; 7.13 Unipolar transistors in r.f. amplifiers; 7.14 Automatic gain control.