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Silicon molecular beam epitaxy : proceedings of the 3rd International Symposium on Silicon Molecular Beam Epitaxy, Symposium A of the 1989 E-MRS Conference, Strasbourg, France, 30 May-2 June 1989 /

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This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase e...

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Detalles Bibliográficos
Clasificación:	Libro Electrónico
Autores Corporativos:	International Symposium on Silicon Molecular Beam Epitaxy Strasbourg, France, European Materials Research Society
Otros Autores:	Kasper, Erich, Parker, E. H. C.
Formato:	Electrónico Congresos, conferencias eBook
Idioma:	Inglés
Publicado:	Amsterdam ; New York : New York, NY, USA : North-Holland ; Sole distributors for the USA and Canada, Elsevier Science Pub. Co., 1989-<1990>
Colección:	European Materials Research Society symposia proceedings ; v. 10.
Temas:	Molecular beam epitaxy > Congresses. Silicon crystals > Congresses. Crystal growth > Congresses. Superlattices as materials > Congresses. Microstructure > Congresses. �Epitaxie par jets mol�eculaires > Congr�es. Silicium cristallis�e > Congr�es. Cristaux > Croissance > Congr�es. Superr�eseaux > Congr�es. Microstructure (Physique) > Congr�es. Crystal growth Microstructure Molecular beam epitaxy Silicon crystals Superlattices as materials Congress proceedings (reports) Conference papers and proceedings Conference papers and proceedings. Actes de congr�es.
Acceso en línea:	Texto completo

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