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100406s1970 nyua ob 001 0 eng d |
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|a OCLCE
|b eng
|e pn
|c OCLCE
|d OCLCQ
|d OPELS
|d E7B
|d OCLCQ
|d OCLCO
|d N$T
|d IDEBK
|d OCLCF
|d OCLCO
|d YDXCP
|d OCLCQ
|d LEAUB
|d LUN
|d OCLCQ
|d OCLCO
|d S2H
|d OCLCO
|d COM
|d OCLCO
|d OCL
|d OCLCQ
|d OCLCO
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|a 297310352
|a 842936481
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|a 9780124808508
|q (electronic bk.)
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|a 0124808506
|q (electronic bk.)
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|a 9780323157216
|q (electronic bk.)
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|a 0323157211
|q (electronic bk.)
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|a (OCoLC)602266954
|z (OCoLC)297310352
|z (OCoLC)842936481
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|a dlr
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|a TK7871.85
|b .M38
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|a TEC
|x 008090
|2 bisacsh
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|a TEC
|x 008100
|2 bisacsh
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|a 621.381/52
|2 18
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|a 33.72
|2 bcl
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|a 33.79
|2 bcl
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|a UP 3000
|2 rvk
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100 |
1 |
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|a Mayer, James W.,
|d 1930-
|
245 |
1 |
0 |
|a Ion implantation in semiconductors, silicon and germanium
|c [by] James W. Mayer, Lennart Eriksson and John A. Davies.
|
260 |
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|a New York,
|b Academic Press,
|c 1970.
|
300 |
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|a 1 online resource (xiii, 280 pages)
|b illustrations
|
336 |
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|a text
|b txt
|2 rdacontent
|
337 |
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|a computer
|b c
|2 rdamedia
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338 |
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|a online resource
|b cr
|2 rdacarrier
|
504 |
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|a Includes bibliographical references.
|
506 |
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|3 Use copy
|f Restrictions unspecified
|2 star
|5 MiAaHDL
|
533 |
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|a Electronic reproduction.
|b [Place of publication not identified] :
|c HathiTrust Digital Library,
|d 2010.
|5 MiAaHDL
|
538 |
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|a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002.
|u http://purl.oclc.org/DLF/benchrepro0212
|5 MiAaHDL
|
583 |
1 |
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|a digitized
|c 2010
|h HathiTrust Digital Library
|l committed to preserve
|2 pda
|5 MiAaHDL
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588 |
0 |
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|a Print version record.
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650 |
|
0 |
|a Ion implantation.
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650 |
|
0 |
|a Semiconductors.
|
650 |
|
0 |
|a Ion bombardment.
|
650 |
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2 |
|a Semiconductors
|0 (DNLM)D012666
|
650 |
|
6 |
|a Semi-conducteurs.
|0 (CaQQLa)201-0318258
|
650 |
|
6 |
|a Bombardement ionique.
|0 (CaQQLa)201-0004234
|
650 |
|
6 |
|a Ions
|x Implantation.
|0 (CaQQLa)201-0072132
|
650 |
|
7 |
|a semiconductor.
|2 aat
|0 (CStmoGRI)aat300015117
|
650 |
|
7 |
|a TECHNOLOGY & ENGINEERING
|x Electronics
|x Semiconductors.
|2 bisacsh
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650 |
|
7 |
|a TECHNOLOGY & ENGINEERING
|x Electronics
|x Solid State.
|2 bisacsh
|
650 |
|
7 |
|a Ion bombardment
|2 fast
|0 (OCoLC)fst00978567
|
650 |
|
7 |
|a Ion implantation
|2 fast
|0 (OCoLC)fst00978590
|
650 |
|
7 |
|a Semiconductors
|2 fast
|0 (OCoLC)fst01112198
|
650 |
|
7 |
|a Halbleiter
|2 gnd
|0 (DE-588)4022993-2
|
650 |
|
7 |
|a Ionenimplantation
|2 gnd
|0 (DE-588)4027606-5
|
650 |
1 |
7 |
|a Halfgeleiders.
|2 gtt
|
650 |
1 |
7 |
|a Ionenimplantatie.
|2 gtt
|
650 |
1 |
7 |
|a Silicium.
|2 gtt
|
650 |
1 |
7 |
|a Germanium.
|2 gtt
|
700 |
1 |
|
|a Eriksson, Lennart,
|d 1938-
|e author.
|
700 |
1 |
|
|a Davies, John Arthur,
|d 1927-
|e author.
|
776 |
0 |
8 |
|i Print version:
|a Mayer, James W., 1930-
|t Ion implantation in semiconductors, silicon and germanium.
|d New York, Academic Press, 1970
|w (DLC) 75107563
|w (OCoLC)92308
|
856 |
4 |
0 |
|u https://sciencedirect.uam.elogim.com/science/book/9780124808508
|z Texto completo
|