Cargando…
Very high speed integrated circuits : gallium arsenide LSI /
SEMICONDUCTORS & amp; SEMIMETALS V29.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston, Mass. :
Academic Press,
�1990.
|
| Colección: | Semiconductors and semimetals ;
vol. 29. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
| LEADER | 00000cam a2200000 a 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn593758056 | ||
| 003 | OCoLC | ||
| 005 | 20231117033017.0 | ||
| 006 | m o d | ||
| 007 | cr un||||a|a|| | ||
| 008 | 100401s1990 maua ob 001 0 eng d | ||
| 040 | |a OCLCE |b eng |e pn |c OCLCE |d N$T |d OCLCQ |d IDEBK |d OCLCQ |d OPELS |d OCLCQ |d OCLCF |d YDXCP |d EBLCP |d OCLCQ |d DEBSZ |d MERUC |d OCLCQ |d LEAUB |d OCLCQ |d OCLCO |d OCL |d OCLCQ |d OCLCO | ||
| 019 | |a 268559394 |a 645846920 |a 808684083 |a 1086525825 | ||
| 020 | |a 9780080864266 |q (electronic bk.) | ||
| 020 | |a 0080864260 |q (electronic bk.) | ||
| 020 | |a 0127521291 |q (electronic bk.) | ||
| 020 | |a 9780127521299 |q (electronic bk.) | ||
| 035 | |a (OCoLC)593758056 |z (OCoLC)268559394 |z (OCoLC)645846920 |z (OCoLC)808684083 |z (OCoLC)1086525825 | ||
| 042 | |a dlr | ||
| 050 | 4 | |a QC610.9 |b .S48 v.29 | |
| 072 | 7 | |a SCI |x 021000 |2 bisacsh | |
| 082 | 0 | 4 | |a 537.6/223 |2 22 |
| 245 | 0 | 0 | |a Very high speed integrated circuits : |b gallium arsenide LSI / |c volume editor, Toshiaki Ikoma. |
| 260 | |a Boston, Mass. : |b Academic Press, |c �1990. | ||
| 300 | |a 1 online resource (x, 309 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals / edited by R.K. Willardson, A.C. Beer ; |v v. 29 | |
| 504 | |a Includes bibliographical references and index. | ||
| 506 | |3 Use copy |f Restrictions unspecified |2 star |5 MiAaHDL | ||
| 533 | |a Electronic reproduction. |b [Place of publication not identified] : |c HathiTrust Digital Library, |d 2010. |5 MiAaHDL | ||
| 538 | |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. |u http://purl.oclc.org/DLF/benchrepro0212 |5 MiAaHDL | ||
| 583 | 1 | |a digitized |c 2010 |h HathiTrust Digital Library |l committed to preserve |2 pda |5 MiAaHDL | |
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Very High Speed Integrated Circuits: Gallium Arsenide LSI; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Active Layer Formation by Ion Implantation; List of Symbols; I. Introduction; ll. Furnace Annealing; lll. Rapid Thermal Annealing; References; Chapter 2. Focused Ion Beam Implantation Technology; I. Introduction; ll. Implanter; lll. FIB Implants; IV. Compositional Disordering of GaAs-AlGaAs; V. FIB-Doping MBE Growth; VI. Prospect of FIB Technology; References; Chapter 3. Device Fabrication Process Technology; l. Introduction. | |
| 505 | 8 | |a Ll. Fundamental Process Technologieslll. Self-Aligned MESFET Technology; IV. Device Technology Effective for Improving Characteristics in Submicron Gate MESFETs; V. Summary; References; Chapter 4. GaAs LSI Circuit Design; I. Introduction; Il. Device Analysis; lll. FET Model; IV. Other Elements; V. Basic Circuit Configurations; Vl. LSI Design; VII. Testing Technology; VIII. Summary; References; Chapter 5. GaAs LSI Fabrication and Performance; I. Introduction; Il. Characterization of Semi-insulating GaAs Wafers for IC Application. | |
| 505 | 8 | |a Ill. TEG Selection for LSI Fabrication Process and Chip/Wafer LayoutIV. FET Fabrication and Performance for LSls; V. Circuit Elements and Interconnection; VI. Assembly Techniques and Packaging; VII. LSI Fabrication and Performance; VIII. Summary and Future Trends; References; Index; Contents of Previous Volumes. | |
| 520 | |a SEMICONDUCTORS & amp; SEMIMETALS V29. | ||
| 650 | 0 | |a Gallium arsenide semiconductors. | |
| 650 | 0 | |a Integrated circuits. | |
| 650 | 0 | |a Gallium arsenide. | |
| 650 | 6 | |a Ars�eniure de gallium. |0 (CaQQLa)201-0035005 | |
| 650 | 6 | |a Circuits int�egr�es. |0 (CaQQLa)201-0032322 | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a Gallium arsenide |2 fast |0 (OCoLC)fst00937273 | |
| 650 | 7 | |a Gallium arsenide semiconductors |2 fast |0 (OCoLC)fst00937276 | |
| 650 | 7 | |a Integrated circuits |2 fast |0 (OCoLC)fst00975535 | |
| 700 | 1 | |a Ikoma, Toshiaki, |d 1941- | |
| 776 | 0 | 8 | |i Print version: |t Very high speed integrated circuits. |d Boston, Mass. : Academic Press, �1990 |w (OCoLC)21886910 |
| 830 | 0 | |a Semiconductors and semimetals ; |v vol. 29. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521299 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/29 |z Texto completo |