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Etching of crystals : theory, experiment, and application /
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Amsterdam ; New York : New York, NY, USA :
North-Holland ; Sole distributors for the USA and Canada, Elsevier Science Pub. Co.,
1987.
|
| Colección: | Defects in solids ;
v. 15. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Etching of Crystals: Theory, Experiment, and Application; Copyright Page; Dedication; Preface; Table of Contents; Chapter 1. Defects in crystals; 1.1. Nature of crystal surfaces; 1.2. Point defects and their clusters; 1.3. Dislocations; 1.4. Boundaries between regions of different orientations; 1.5. p-n homojunctions and double heterojunctions; 1.6. Growth striatums, sector boundaries and lineages; Chapter 2. Detection of defects; 2.1. Growth spirals; 2.2. Chemical etching; 2.3. Thermal etching; 2.4. Preferential oxidation; 2.5. Preferential dehydration and decomposition
- 2.6. Ion-bombardment etching2.7. Enhanced nonradiative recombination techniques; 2.8. Decoration techniques; 2.9. Topographic techniques; 2.10. The photoelastic method; 2.11. Thin-film techniques; 2.12. Advantages and limitations of the different methods to study defects; Chapter 3. Growth and dissolution of crystals; 3.1. Conditions of the formation of growth nuclei; 3.2. Nucleation; 3.3. Kinetics of crystal growth; 3.4. Surface entropy factor; 3.5. The morphology of crystals; 3.6. Growth forms from the viewpoint of growth kinetics; 3.7. Effect of impurities on kinetics and growth form
- 3.8. Ordered impurity-adsorption layers and growth morphodromes3.9. Growth controlled by mass and heat transfer; 3.10. Growth controlled by simultaneous mass transfer and surface reactions; 3.11. Reciprocity of growth and dissolution; 3.12. Surface roughening during diffusion-controlled dissolution; 3.13. Crystal-solution interfacial layer; 3.14. Anisotropy of the macroscopic dissolution rate; Chapter 4. Theories of dissolution and etch-pit formation; 4.1. The nature of pit sites; 4.2. Kinematic theories; 4.3. Thermodynamic theories; 4.4. Diffusion theories
- 4.5. Topochemical adsorption theories4.6. The present-day situation; Chapter 5. Chemical aspects of the dissolution process; 5.1. Catalytic reactions; 5.2. Elementary steps involved in dissolution; 5.3. Types of reactions during dissolution; 5.4. Formation of oxide layers; 5.5. Dissolution of water-soluble crystals; 5.6. Dissolution of water-insoluble ionic crystals; 5.7. Dissolution of metals; 5.8. Dissolution of semiconductors; 5.9. Maxima in the curves of dissolution rate versus etchant composition; 5.10. Relation between etch rate and the pH of the solution
- Chapter 6. Solubility of crystals and complexes in solution6.1. The structure of solvents and solutions; 6.2. Solvation and solubility; 6.3. Solvents for crystals and estimation of crystal solubility in solvents other than water; 6.4. Temperature dependence of the solubility; 6.5. The relationship between solubility, surface energy and hardness of crystals; 6.6. Complexes in solution and their structure; 6.7. Stability of complexes; 6.8. Size and charge of complexes; Chapter 7. The kinetics and the mechanism of dissolution: a survey of experimental results; 7.1. Alkali halide crystals