Materials analysis by ion channeling : submicron crystallography /

Our intention has been to write a book that would be useful to people with a variety of levels of interest in this subject. Clearly it should be useful to both graduate students and workers in the field. We have attempted to bring together many of the concepts used in channeling beam analysis with a...

Descripción completa

Detalles Bibliográficos
Clasificación:Libro Electrónico
Autor principal: Feldman, Leonard C.
Otros Autores: Mayer, James W., 1930-, Picraux, S. T., 1943-
Formato: Electrónico eBook
Idioma:Inglés
Publicado: New York : Academic Press, 1982.
Temas:
Channeling (Physics)
Solids > Surfaces.
Crystals > Defects.
Ion bombardment.
Crystallography.
Canalisation (Physique)
Cristaux > D�efauts.
Bombardement ionique.
Cristallographie.
SCIENCE > Nanoscience.
Channeling
Ionenstrahl
Kristallographie
Sekund�arionen-Massenspektrometrie
Tunneleffekt
Acceso en línea:Texto completo
Tabla de Contenidos:
  • Front Cover
  • Materials Analysis by Ion Channeling: Submicron Crystallography
  • Copyright Page
  • Table of Contents
  • Dedication
  • Preface
  • Acknowledgments
  • Glossary of Symbols
  • Introduction
  • General References
  • Chapter 1. Interaction of Ion Beams with Surfaces
  • 1.1 Introduction
  • 1.2 Surface Interactions and the Formation of the Shadow Cone
  • 1.3 Close-Encounter Probability
  • 1.4 Computer Simulations of Surface Scattering
  • 1.5 Surface Structure of a Crystal
  • 1.6 Measurement of the Close-Encounter Probability
  • 1.7 Adsorbate-Induced Reconstruction of the W(001) Surface1.8 Perspectives
  • References
  • Chapter 2. Channeling within the Crystal
  • 2.1 Introduction
  • 2.2 Energy Loss
  • 2.3 Continuum Model
  • 2.4 Transverse Energy
  • 2.5 Critical Angle for Channeling
  • 2.6 Minimum Yield
  • 2.7 Blocking and Double Alignment
  • 2.8 Angular Yield Curve: A Geometric Approach
  • 2.9 Computer Simulations: Angular Width and Minimum Yield
  • 2.10 Planar Channeling
  • 2.11 Substitutional Impurity Location
  • 2.12 Metastable Alloy Formation in Implanted Copper
  • 2.13 PerspectivesReferences
  • Chapter 3. Particle Distributions within the Channel
  • 3.1 Introduction
  • 3.2 Spatial Probability for a Channeled Particle
  • 3.3 Spatial Flux Distribution�a�?Parallel Incidence
  • 3.4 Close-Encounter Probability�a�?Parallel Incidence
  • 3.5 Spatial Flux Distribution�a�?Angular Dependence
  • 3.6 Close-Encounter Probability�a�?Angular Dependence
  • 3.7 General Principles of Impurity Location
  • 3.8 The Lattice Location of Hydrogen in Tungsten
  • 3.9 Perspectives
  • References
  • Chapter 4. Dechanneling by Defects
  • 4.1 Introduction4.2 Dechanneling in the Perfect Crystal
  • 4.3 Dechanneling by Defects
  • 4.4 Point Defects
  • 4.5 Dislocation Lines
  • 4.6 Dislocation Loops
  • 4.7 Stacking Faults
  • 4.8 Twins
  • 4.9 Voids and Gas Bubbles
  • 4.10 Precipitates
  • 4.11 Amorphous Clusters
  • 4.12 Amorphous and Polycrystalline Layers
  • 4.13 Summary of Defect Dechanneling
  • References
  • Chapter 5. Defect Depth Distributions
  • 5.1 Introduction
  • 5.2 Channeling Yield in Disordered Crystals
  • 5.3 Random Fraction �I?R
  • 5.4 Defect Scattering Factor �?
  • 5.5 Defects�a�?Dechanneling Only5.6 Defects�a�?Dechanneling and Direct Scattering
  • 5.7 Ion Implantation in Si
  • 5.8 Ion Implantation in Al
  • 5.9 Summary of Disorder Analysis
  • References
  • Chapter 6. Surfaces
  • 6.1 Introduction
  • 6.2 Surface Reconstruction: Si(001)
  • 6.3 Surface Relaxation: Si(111)
  • 6.4 Substrate Shadowing: Epitaxial Au on Ag (111)
  • 6.5 Adsorbate Location by the Blocking Technique: S on Ni(011)
  • 6.6 Surface Reordering: �I? on W, Pt, and Si
  • 6.7 Perspectives
  • References
  • Chapter 7. Surface Layers and Interfaces

Ejemplares similares