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Introduction to microelectronics /
| Clasificación: | Libro Electrónico |
|---|---|
| Autor principal: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Oxford [England] ; New York :
Pergamon Press,
1978.
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| Edición: | 2d ed. |
| Colección: | Pergamon international library of science, technology, engineering, and social studies.
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| Temas: | |
| Acceso en línea: | Texto completo |
Tabla de Contenidos:
- Front Cover; Introduction to Microelectronics; Copyright Page; Table of Contents; Preface to Second Edition; Preface to First Edition; Chapter 1. Basic Theory; 1.1. Introduction; 1.2. Energy Bands in Solids; 1.3. The Fermi Energy Level; 1.4. Extrinsic Semiconductors; 1.5. The p-n Junction; 1.6. The Metal-Semiconductor Junction; 1.7. The Metal-Insulator-Semiconductor (MIS) Junction; 1.8. Effective Mass of a Carrier; 1.9. Carrier Mobilities; 1.10. Crystalline Structure; Chapter 2. Processing of Silicon Devices and Circuits; 2.1. Introduction; 2.2. Preparation of Artwork.
- 2.3. Photo-sensitive Resists2.4. Masking and Diffusion; 2.5. Metallization; 2.6. Epitaxial Growth; 2.7. Alloyed Junctions; 2.8. Summary; Chapter 3. Silicon Planar Devices and Integrated Circuits; 3.1. Introduction; 3.2. The Bipolar Planar Transistor; 3.3 The Planar Diode; 3.4. The Silicon Integrated Circuit; Chapter 4. Bipolar Logic Circuits; 4.1. Introduction; 4.2. Basic Logic Functions; 4.3. Performance Specifications; 4.4. Logic Circuits; 4.5. Comparison of Logic Gates; 4.6. SchottkyTTL; 4.7. Merged Transistor Logic; Chapter 5. Differential Amplifiers; 5.1. Introduction.
- 5.2. The Differential Amplifier5.3. The Integrated Operational A mplifier; Chapter 6. Metal-Insulator-Semiconductor Devices; 6.1. Introduction; 6.2. The Basic MOST Mechanism; 6.3. MOST Symbols. Substrate Bias; 6.4. Threshold Voltage; 6.5. The Polysilicon Gate; 6.6. N-Channel Devices; 6.7. Complementary Metal-Oxide-Semiconductor (CMOS) Devices; 6.8. Silicon on Sapphire (SOS); 6.9. Other Developments; 6.10. Equations for the MOST; 6.11. The MOST as a Resistor; 6.12. Input Impedance of a MOST; 6.13. Charge Coupled Devices (CCDs); Chapter 7. MOS Circuits; 7.1. In troduction.
- 7.2. The Basic In verier (or Negate) Circuit7.3. The Basic NOR Gate; 7.4. The Basic NAND Gate; 7.5. Comparison of Areas Required for the Basic NAND and NOR Gates; 7.6. NAND-NORGate; 7.7. Small-signal Analog Amplifier; 7.8. Large-signal Analog Amplifier; 7.9. MOSTs as Frequency Doublers; 7.10. CCD Applications; 7.11. The CMOS Inverter; Chapter 8. Thin-film Circuits; 8.1. Introduction; 8.2. Thin-film Deposition Methods; 8.3. Masking and Pattern-making Methods; 8.4. Thin-film Resistors; 8.5. Thin-film Capacitors; 8.6. The Thin-film Transistor; Chapter 9. Thick-film Circuits; 9.1. Introduction.
- 9.2. The Silk-screen Process9.3. Resistors; 9.4. Capacitors; 9.5. Conductor Patterns and Substrates; Chapter 10. Hybrid Circuits; 10.1. Introduction; 10.2. Hybrid Assembly on a Chip; 10.3. Hybrid Bonding Methods and Circuits; Chapter 11. Microwave Applications of Microelectronics; 11.1 Introduction; 11.2. Passive Components and Microstrip Transmission Lines; 11.3. Microwave Solid-state Power Sources; 11.4. High Frequency Transistors; 11.5. Metal-Semiconductor Junction Devices; Chapter 12. Semiconductor Memories; 12.1. Introduction; 12.2. Some Commonly Used Terms.