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100317s1978 enkaf o 001 0 eng d |
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|a OCLCE
|b eng
|e pn
|c OCLCE
|d OCLCQ
|d OCLCO
|d OCLCA
|d OCLCQ
|d OCLCF
|d UIU
|d N$T
|d E7B
|d EBLCP
|d IDEBK
|d NLGGC
|d DEBSZ
|d YDXCP
|d OCLCQ
|d MERUC
|d OCLCA
|d OCLCQ
|d OCLCO
|d S2H
|d OCLCO
|d COM
|d OCLCO
|d OCLCQ
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| 019 |
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|a 655015063
|a 894790934
|a 899000937
|a 974614801
|a 974666796
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| 020 |
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|a 9781483155395
|q (electronic bk.)
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|a 1483155390
|q (electronic bk.)
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| 020 |
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|z 0080226876
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|z 9780080226873
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|z 0080226884
|q (pbk.)
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| 020 |
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|z 9780080226880
|q (pbk.)
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|a (OCoLC)558008698
|z (OCoLC)655015063
|z (OCoLC)894790934
|z (OCoLC)899000937
|z (OCoLC)974614801
|z (OCoLC)974666796
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| 042 |
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|a dlr
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| 050 |
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4 |
|a TK7874
|b .R6 1978
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| 072 |
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|a TEC
|x 009070
|2 bisacsh
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| 082 |
0 |
4 |
|a 621.381/7
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| 100 |
1 |
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|a Roddy, Dennis,
|d 1931-
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| 245 |
1 |
0 |
|a Introduction to microelectronics /
|c by D. Roddy.
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| 250 |
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|a 2d ed.
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| 260 |
|
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|a Oxford [England] ;
|a New York :
|b Pergamon Press,
|c 1978.
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| 300 |
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|a 1 online resource (xii, 216 pages, 5 unnumbered leaves of plates) :
|b illustrations
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| 336 |
|
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|a text
|b txt
|2 rdacontent
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| 337 |
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|a computer
|b c
|2 rdamedia
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| 338 |
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|a online resource
|b cr
|2 rdacarrier
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| 490 |
1 |
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|a Pergamon international library of science, technology, engineering, and social studies
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| 506 |
|
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|3 Use copy
|f Restrictions unspecified
|2 star
|5 MiAaHDL
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| 533 |
|
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|a Electronic reproduction.
|b [Place of publication not identified] :
|c HathiTrust Digital Library,
|d 2010.
|5 MiAaHDL
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| 538 |
|
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|a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002.
|u http://purl.oclc.org/DLF/benchrepro0212
|5 MiAaHDL
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| 583 |
1 |
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|a digitized
|c 2010
|h HathiTrust Digital Library
|l committed to preserve
|2 pda
|5 MiAaHDL
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| 588 |
0 |
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|a Print version record.
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| 505 |
0 |
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|a Front Cover; Introduction to Microelectronics; Copyright Page; Table of Contents; Preface to Second Edition; Preface to First Edition; Chapter 1. Basic Theory; 1.1. Introduction; 1.2. Energy Bands in Solids; 1.3. The Fermi Energy Level; 1.4. Extrinsic Semiconductors; 1.5. The p-n Junction; 1.6. The Metal-Semiconductor Junction; 1.7. The Metal-Insulator-Semiconductor (MIS) Junction; 1.8. Effective Mass of a Carrier; 1.9. Carrier Mobilities; 1.10. Crystalline Structure; Chapter 2. Processing of Silicon Devices and Circuits; 2.1. Introduction; 2.2. Preparation of Artwork.
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| 505 |
8 |
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|a 2.3. Photo-sensitive Resists2.4. Masking and Diffusion; 2.5. Metallization; 2.6. Epitaxial Growth; 2.7. Alloyed Junctions; 2.8. Summary; Chapter 3. Silicon Planar Devices and Integrated Circuits; 3.1. Introduction; 3.2. The Bipolar Planar Transistor; 3.3 The Planar Diode; 3.4. The Silicon Integrated Circuit; Chapter 4. Bipolar Logic Circuits; 4.1. Introduction; 4.2. Basic Logic Functions; 4.3. Performance Specifications; 4.4. Logic Circuits; 4.5. Comparison of Logic Gates; 4.6. SchottkyTTL; 4.7. Merged Transistor Logic; Chapter 5. Differential Amplifiers; 5.1. Introduction.
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| 505 |
8 |
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|a 5.2. The Differential Amplifier5.3. The Integrated Operational A mplifier; Chapter 6. Metal-Insulator-Semiconductor Devices; 6.1. Introduction; 6.2. The Basic MOST Mechanism; 6.3. MOST Symbols. Substrate Bias; 6.4. Threshold Voltage; 6.5. The Polysilicon Gate; 6.6. N-Channel Devices; 6.7. Complementary Metal-Oxide-Semiconductor (CMOS) Devices; 6.8. Silicon on Sapphire (SOS); 6.9. Other Developments; 6.10. Equations for the MOST; 6.11. The MOST as a Resistor; 6.12. Input Impedance of a MOST; 6.13. Charge Coupled Devices (CCDs); Chapter 7. MOS Circuits; 7.1. In troduction.
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| 505 |
8 |
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|a 7.2. The Basic In verier (or Negate) Circuit7.3. The Basic NOR Gate; 7.4. The Basic NAND Gate; 7.5. Comparison of Areas Required for the Basic NAND and NOR Gates; 7.6. NAND-NORGate; 7.7. Small-signal Analog Amplifier; 7.8. Large-signal Analog Amplifier; 7.9. MOSTs as Frequency Doublers; 7.10. CCD Applications; 7.11. The CMOS Inverter; Chapter 8. Thin-film Circuits; 8.1. Introduction; 8.2. Thin-film Deposition Methods; 8.3. Masking and Pattern-making Methods; 8.4. Thin-film Resistors; 8.5. Thin-film Capacitors; 8.6. The Thin-film Transistor; Chapter 9. Thick-film Circuits; 9.1. Introduction.
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| 505 |
8 |
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|a 9.2. The Silk-screen Process9.3. Resistors; 9.4. Capacitors; 9.5. Conductor Patterns and Substrates; Chapter 10. Hybrid Circuits; 10.1. Introduction; 10.2. Hybrid Assembly on a Chip; 10.3. Hybrid Bonding Methods and Circuits; Chapter 11. Microwave Applications of Microelectronics; 11.1 Introduction; 11.2. Passive Components and Microstrip Transmission Lines; 11.3. Microwave Solid-state Power Sources; 11.4. High Frequency Transistors; 11.5. Metal-Semiconductor Junction Devices; Chapter 12. Semiconductor Memories; 12.1. Introduction; 12.2. Some Commonly Used Terms.
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| 650 |
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0 |
|a Microelectronics.
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| 650 |
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2 |
|a Miniaturization
|0 (DNLM)D008904
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| 650 |
|
6 |
|a Micro�electronique.
|0 (CaQQLa)201-0035977
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| 650 |
|
7 |
|a microelectronics.
|2 aat
|0 (CStmoGRI)aat300253974
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| 650 |
|
7 |
|a TECHNOLOGY & ENGINEERING
|x Mechanical.
|2 bisacsh
|
| 650 |
|
7 |
|a Microelectronics.
|2 fast
|0 (OCoLC)fst01019757
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| 650 |
|
7 |
|a Halbleitertechnologie
|2 gnd
|0 (DE-588)4158814-9
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| 650 |
|
7 |
|a Mikroelektronik
|2 gnd
|0 (DE-588)4039207-7
|
| 776 |
0 |
8 |
|i Print version:
|a Roddy, Dennis, 1931-
|t Introduction to microelectronics.
|b 2d ed.
|d Oxford [Eng.] ; New York : Pergamon Press, 1978
|w (DLC) 77030485
|w (OCoLC)3608333
|
| 830 |
|
0 |
|a Pergamon international library of science, technology, engineering, and social studies.
|
| 856 |
4 |
0 |
|u https://sciencedirect.uam.elogim.com/science/book/9780080226873
|z Texto completo
|
