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Hydrogenated amorphous silicon. Part B, Optical properties /
SEMICONDUCTORS & amp; SEMIMETALS V21B.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Orlando, Fla :
Academic Press,
1984.
|
| Colección: | Semiconductors and semimetals ;
v. 21, pt. B. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Semiconductors and Semimetals, Volume 21, Part B; Copyright Page; Contents; List of Contributors; Foreword; Preface; Chapter 1. Introduction; References; Chapter 2. The Optical Absorption Edge of a-Si: H; I. Introduction; II. Experimental Techniques; III. Theoretical Models for the Optical Absorption Edge of Amorphous Semiconductors; IV. Experimental Data on the Optical Absorption Edge of a-Si: Hx; V. Summary and Conclusion; References; Chapter 3. Optical Properties of Defect States in a-Si: H; I. Introduction; II. Photothermal Deflection Spectroscopy.
- III. Optical Spectroscopy of Defects in a-Si: HIV. Carrier Transport; V. PDS-Deduced Features in the Density of States of a-Si: H; VI. Concluding Remarks; References; Chapter 4. The Vibrational Spectra of a-Si: H; I. Introduction; II. Infrared Spectroscopy; III. Vibrational Spectra of a-Si and a-Si: H; IV. Vibrational Spectra of a-Si: F and a-Si: H, F; V. Effect of Dopant and Impurities on a-Si: H Vibrational Spectra; VI. Infrared Measurements of Films on Prisms, Studies of a-Si: H Stability; VII. Conclusions; Appendix: Calculation of the Number of SiHx Oscillators in a-Si: H; References.
- Chapter 5. Electroreflectance and ElectroabsorptionI. Introduction; II. Usefulness and Difficulties of the Modulation Spectroscopic Characterization of Amorphous Solids; III. Electroreflectance; IV. Electroabsorption; V. Conclusion; References; Chapter 6. Raman Scattering of Amorphous Si, Ge, and Their Alloys; I. Introduction; II. Raman Processes and Phenomenology; III. Polarizability and Phonon Density-of-States Theory; IV. Experiment; V. Results; VI. Conclusions; References; Chapter 7. Luminescence in a-Si: H; I. Introduction; II. Radiative Recombination; III. Nonradiative Recombination.
- IV. Doped and Compensated a-Si: HV. Electric and Magnetic Field Dependence; VI. Summary; References; Chapter 8. Photoconductivity; I. Introduction; II. General Concepts; III. Recombination; IV. Photoconductivity Mechanisms; V. Experiments; VI. Conclusion; References; Chaper 9. Time-Resolved Spectroscopy of Electronic Relaxation Processes; I. Introduction; II. Picosecond Pump and Probe Technique; III. Hot Carrier Thermalization; IV. Carrier Trapping; V. Photoinduced Midgap Absorption; VI. Recombination; References.
- Chapter 10. IR-Induced Quenching and Enhancement of Photoconductivity and PhotoluminescenceI. Introduction; II. Historical Background; III. Experimental Details; IV. Experimental Results and Interpretation; V. Suggested Future Work; References; Chapter 11. Irradiation-Induced Metastable Effects; I. Introduction; II. Experimental Observations; III. The Nature of Metastable Defects; IV. Summary; References; Chapter 12. Photoelectron Emission Studies; I. Introduction; II. The Basics of Photoelectron Spectroscopy; III. Core-Level Spectra; IV. Valence and Conduction Bands.