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Hydrogenated amorphous silicon. Part B, Optical properties /
SEMICONDUCTORS & amp; SEMIMETALS V21B.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Orlando, Fla :
Academic Press,
1984.
|
| Colección: | Semiconductors and semimetals ;
v. 21, pt. B. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
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| 050 | 4 | |a QC610.9 |b .S48eb vol. 21, pt. B | |
| 072 | 7 | |a SCI |x 021000 |2 bisacsh | |
| 082 | 0 | 4 | |a 537.6/22 |2 22 |
| 245 | 0 | 0 | |a Hydrogenated amorphous silicon. |n Part B, |p Optical properties / |c volume editor, Jacques I. Pankove. |
| 246 | 3 | 0 | |a Optical properties |
| 260 | |a Orlando, Fla : |b Academic Press, |c 1984. | ||
| 300 | |a 1 online resource (xiii, 439 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals ; |v v. 21, pt. B | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Semiconductors and Semimetals, Volume 21, Part B; Copyright Page; Contents; List of Contributors; Foreword; Preface; Chapter 1. Introduction; References; Chapter 2. The Optical Absorption Edge of a-Si: H; I. Introduction; II. Experimental Techniques; III. Theoretical Models for the Optical Absorption Edge of Amorphous Semiconductors; IV. Experimental Data on the Optical Absorption Edge of a-Si: Hx; V. Summary and Conclusion; References; Chapter 3. Optical Properties of Defect States in a-Si: H; I. Introduction; II. Photothermal Deflection Spectroscopy. | |
| 505 | 8 | |a III. Optical Spectroscopy of Defects in a-Si: HIV. Carrier Transport; V. PDS-Deduced Features in the Density of States of a-Si: H; VI. Concluding Remarks; References; Chapter 4. The Vibrational Spectra of a-Si: H; I. Introduction; II. Infrared Spectroscopy; III. Vibrational Spectra of a-Si and a-Si: H; IV. Vibrational Spectra of a-Si: F and a-Si: H, F; V. Effect of Dopant and Impurities on a-Si: H Vibrational Spectra; VI. Infrared Measurements of Films on Prisms, Studies of a-Si: H Stability; VII. Conclusions; Appendix: Calculation of the Number of SiHx Oscillators in a-Si: H; References. | |
| 505 | 8 | |a Chapter 5. Electroreflectance and ElectroabsorptionI. Introduction; II. Usefulness and Difficulties of the Modulation Spectroscopic Characterization of Amorphous Solids; III. Electroreflectance; IV. Electroabsorption; V. Conclusion; References; Chapter 6. Raman Scattering of Amorphous Si, Ge, and Their Alloys; I. Introduction; II. Raman Processes and Phenomenology; III. Polarizability and Phonon Density-of-States Theory; IV. Experiment; V. Results; VI. Conclusions; References; Chapter 7. Luminescence in a-Si: H; I. Introduction; II. Radiative Recombination; III. Nonradiative Recombination. | |
| 505 | 8 | |a IV. Doped and Compensated a-Si: HV. Electric and Magnetic Field Dependence; VI. Summary; References; Chapter 8. Photoconductivity; I. Introduction; II. General Concepts; III. Recombination; IV. Photoconductivity Mechanisms; V. Experiments; VI. Conclusion; References; Chaper 9. Time-Resolved Spectroscopy of Electronic Relaxation Processes; I. Introduction; II. Picosecond Pump and Probe Technique; III. Hot Carrier Thermalization; IV. Carrier Trapping; V. Photoinduced Midgap Absorption; VI. Recombination; References. | |
| 505 | 8 | |a Chapter 10. IR-Induced Quenching and Enhancement of Photoconductivity and PhotoluminescenceI. Introduction; II. Historical Background; III. Experimental Details; IV. Experimental Results and Interpretation; V. Suggested Future Work; References; Chapter 11. Irradiation-Induced Metastable Effects; I. Introduction; II. Experimental Observations; III. The Nature of Metastable Defects; IV. Summary; References; Chapter 12. Photoelectron Emission Studies; I. Introduction; II. The Basics of Photoelectron Spectroscopy; III. Core-Level Spectra; IV. Valence and Conduction Bands. | |
| 520 | |a SEMICONDUCTORS & amp; SEMIMETALS V21B. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a Semimetals. | |
| 650 | 0 | |a Silicon. | |
| 650 | 6 | |a Semi-conducteurs. |0 (CaQQLa)201-0318258 | |
| 650 | 6 | |a Semi-m�etaux. |0 (CaQQLa)201-0096003 | |
| 650 | 6 | |a Silicium. |0 (CaQQLa)201-0052755 | |
| 650 | 7 | |a semiconductor. |2 aat |0 (CStmoGRI)aat300015117 | |
| 650 | 7 | |a silicon. |2 aat |0 (CStmoGRI)aat300011769 | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 650 | 7 | |a Semimetals |2 fast |0 (OCoLC)fst01112274 | |
| 650 | 7 | |a Silicon |2 fast |0 (OCoLC)fst01118631 | |
| 650 | 7 | |a Semicondutores elementares. |2 larpcal | |
| 700 | 1 | |a Pankove, Jacques I., |d 1922- | |
| 776 | 0 | 8 | |i Print version: |t Hydrogenated amorphous silicon. Part B, Optical properties. |d Orlando, Fla : Academic Press, 1984 |z 0127521488 |z 9780127521480 |w (OCoLC)17653667 |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 21, pt. B. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521480 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/21/part/PB |z Texto completo |