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Minority carriers in III-V semiconductors : physics and applications /
SEMICONDUCTORS & amp; SEMIMETALS V39.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Boston :
Academic Press,
�1993.
|
| Colección: | Semiconductors and semimetals ;
v. 39. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Minority Carriers in III-V Semiconductors: Physics and Applications, Volume 39; Copyright Page; Contents; List of Contributors; Preface; Chapter l. Radiative Transitions in GaAs and Other lll-V Compounds; I. Introduction; Il. Band Structure in Semiconductors; lll. Absorption and Emission Rates; IV. Optical Gain; V. InGaAsP Materials; VI. Radiative Lifetime; VII. Quantum-Well Structures; VIII. Application to Lasers; References; Chapter 2. Minority-Carrier Lifetime in III-V Semiconductors; I. Introduction; Il. Recombination Mechanisms; lll. Lifetime Measurement Techniques.
- IV. Time-Resolved Photoluminescence in Device StructuresV. High-Injection Effects in Double Heterostructures; VI. GaAs Minority-Carrier Lifetime; VII. AIxGa1-xAs Lifetimes; VIII. Summary; Acknowledgments; References; Chapter 3. High Field Minority Electron Transport in p-GaAs; I. Introduction; Il. Drift Velocity; lll. Energy Transfer Process; IV. Ultrafast Energy Relaxation Process; V. Monte Carlo Simulation Results; VI. Summary; Acknowledgment; References; Chapter 4. Minority-Carrier Transport in lll-V Semiconductors; I. Introduction.
- Il. Minority-Carrier Transport in Compositionally Nonuniform Semiconductorslll. Heavy Doping Effects and Minority-CarrierTransport; IV. Coupled Photon/Minority-Carrier Transport; V. Effects of Heavy Doping on Device-Related Materials Parameters; VI. Minority-Carrier Transport in lll-V Devices; VII. Summary; Acknowledgment; References; Chapter 5. Effects of Heavy Doping and High Excitation on the Band Structure of Gallium Arsenide; I. Introduction; Il. Many-Body Effects in Bulk GaAs; lll. Many-Body Effects in GaAs Quantum Wells; IV. Effects of the Impurity Centres; V. Optical Experiments.
- VI. Electrical ExperimentsAcknowledgments; References; Chapter 6. An Introduction to Nonequilibrium Many-Body Analyses of Optical and Electronic Processes in III-V Semiconductors; I. Introduction; Il. k . p Band Structure; lll. Second Quantization; IV. Ensemble Properties; V. Electron Self-Energy; VI. Dielectric Function Models; VII. Intraband Processes and Transport; VIII. Interband Processes; IX. Conclusions; APPENDIX A; APPENDIX B; APPENDIX C; References; Index; Contents of Volumes in This Series.