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020 |a 9780127521398  |q (electronic bk.) 
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082 0 4 |a 537.6/22  |2 22 
245 0 0 |a Minority carriers in III-V semiconductors :  |b physics and applications /  |c volume editors, Richard K. Ahrenkiel, Mark S. Lundstrom. 
260 |a Boston :  |b Academic Press,  |c �1993. 
300 |a 1 online resource (xi, 409 pages) :  |b illustrations 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
490 1 |a Semiconductors and semimetals ;  |v v. 39 
504 |a Includes bibliographical references and index. 
588 0 |a Print version record. 
506 |3 Use copy  |f Restrictions unspecified  |2 star  |5 MiAaHDL 
533 |a Electronic reproduction.  |b [Place of publication not identified] :  |c HathiTrust Digital Library,  |d 2010.  |5 MiAaHDL 
538 |a Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002.  |u http://purl.oclc.org/DLF/benchrepro0212  |5 MiAaHDL 
583 1 |a digitized  |c 2010  |h HathiTrust Digital Library  |l committed to preserve  |2 pda  |5 MiAaHDL 
505 0 |a Front Cover; Minority Carriers in III-V Semiconductors: Physics and Applications, Volume 39; Copyright Page; Contents; List of Contributors; Preface; Chapter l. Radiative Transitions in GaAs and Other lll-V Compounds; I. Introduction; Il. Band Structure in Semiconductors; lll. Absorption and Emission Rates; IV. Optical Gain; V. InGaAsP Materials; VI. Radiative Lifetime; VII. Quantum-Well Structures; VIII. Application to Lasers; References; Chapter 2. Minority-Carrier Lifetime in III-V Semiconductors; I. Introduction; Il. Recombination Mechanisms; lll. Lifetime Measurement Techniques. 
505 8 |a IV. Time-Resolved Photoluminescence in Device StructuresV. High-Injection Effects in Double Heterostructures; VI. GaAs Minority-Carrier Lifetime; VII. AIxGa1-xAs Lifetimes; VIII. Summary; Acknowledgments; References; Chapter 3. High Field Minority Electron Transport in p-GaAs; I. Introduction; Il. Drift Velocity; lll. Energy Transfer Process; IV. Ultrafast Energy Relaxation Process; V. Monte Carlo Simulation Results; VI. Summary; Acknowledgment; References; Chapter 4. Minority-Carrier Transport in lll-V Semiconductors; I. Introduction. 
505 8 |a Il. Minority-Carrier Transport in Compositionally Nonuniform Semiconductorslll. Heavy Doping Effects and Minority-CarrierTransport; IV. Coupled Photon/Minority-Carrier Transport; V. Effects of Heavy Doping on Device-Related Materials Parameters; VI. Minority-Carrier Transport in lll-V Devices; VII. Summary; Acknowledgment; References; Chapter 5. Effects of Heavy Doping and High Excitation on the Band Structure of Gallium Arsenide; I. Introduction; Il. Many-Body Effects in Bulk GaAs; lll. Many-Body Effects in GaAs Quantum Wells; IV. Effects of the Impurity Centres; V. Optical Experiments. 
505 8 |a VI. Electrical ExperimentsAcknowledgments; References; Chapter 6. An Introduction to Nonequilibrium Many-Body Analyses of Optical and Electronic Processes in III-V Semiconductors; I. Introduction; Il. k . p Band Structure; lll. Second Quantization; IV. Ensemble Properties; V. Electron Self-Energy; VI. Dielectric Function Models; VII. Intraband Processes and Transport; VIII. Interband Processes; IX. Conclusions; APPENDIX A; APPENDIX B; APPENDIX C; References; Index; Contents of Volumes in This Series. 
520 |a SEMICONDUCTORS & amp; SEMIMETALS V39. 
650 0 |a Gallium arsenide semiconductors. 
650 0 |a Semiconductors. 
650 0 |a Excess carriers (Solid state physics) 
650 2 |a Semiconductors  |0 (DNLM)D012666 
650 6 |a Ars�eniure de gallium.  |0 (CaQQLa)201-0035005 
650 6 |a Semi-conducteurs.  |0 (CaQQLa)201-0318258 
650 6 |a Porteurs en exc�es.  |0 (CaQQLa)201-0291737 
650 7 |a semiconductor.  |2 aat  |0 (CStmoGRI)aat300015117 
650 7 |a SCIENCE  |x Physics  |x Electricity.  |2 bisacsh 
650 7 |a Excess carriers (Solid state physics)  |2 fast  |0 (OCoLC)fst00917641 
650 7 |a Gallium arsenide semiconductors  |2 fast  |0 (OCoLC)fst00937276 
650 7 |a Semiconductors  |2 fast  |0 (OCoLC)fst01112198 
650 7 |a Transporte Eletronico E Propriedades Eletricas De Superficies, Interfaces E Peliculas.  |2 larpcal 
650 7 |a Non-m�etaux.  |2 ram 
650 7 |a Compos�es semiconducteurs.  |2 ram 
650 7 |a Semiconducteurs.  |2 ram 
700 1 |a Ahrenkiel, Richard K. 
700 1 |a Lundstrom, Mark S. 
776 0 8 |i Print version:  |t Minority carriers in III-V semiconductors.  |d Boston : Academic Press, �1993  |z 0127521399  |z 9780127521398  |w (OCoLC)28479884 
830 0 |a Semiconductors and semimetals ;  |v v. 39. 
856 4 0 |u https://sciencedirect.uam.elogim.com/science/book/9780127521398  |z Texto completo 
856 4 0 |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/39  |z Texto completo