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Hydrogenated amorphous silicon. Part C, Electronic and transport properties /
SEMICONDUCTORS & amp; SEMIMETALS V21C.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Orlando, Fla :
Academic Press,
1984.
|
| Colección: | Semiconductors and semimetals ;
v. 21, pt. C. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Semiconductors and Semimetals; Copyright Page; Contents; List of Contributors; Foreword; Preface; Chapter 1. Introduction; References; Chapter 2. Density of States from Junction Measurements in Hydrogenated Amorphous Silicon; I. Introduction; II. General Considerations; III. Field Effect; IV. Capacitance; V. Deep-Level Transient Spectroscopy; References; Chapter 3. Magnetic Resonance Measurements in a-Si : H; I. Introduction; II. Nuclear Magnetic Resonance; III. Electron Spin Resonance; IV. Summary; References; Chapter 4. Optically Detected Magnetic Resonance; I. Introduction.
- II. Principle of Optically Detected Magnetic ResonanceIII. Experimental Apparatus; IV. Steady State ODMR; V. Light-Induced Effect in ODMR; VI. Nature of the Recombination Centers in a-Si: H; VII. Remark on Recombination Processes; VIII. Time-Resolved ODMR; IX. Temperature Dependence of ODMR; X. ENDOR and Optically Detected ENDOR; XI. Spin-Dependent Photoinduced Absorption; XII. Summary; References; Chapter 5. Carrier Mobility in a-Si : H; I. General Considerations; II. Experimental Method; III. Experimental Results; IV. Concluding Comments; References.
- Chapter 6. Information about Band-Tail States from Time-of-Flight ExperimentsI. Introduction; II. Time-of-Flight Experiment; III. Experimental Results; IV. Transport Model; V. Discussion; VI. Conclusions; Appendix; References; Chapter 7. Diffusion Length in Undoped a-Si : H; I. Introduction; II. Experimental Determination of Lp in Conventional Semiconductors; III. Estimates of Diffusion Length in Amorphous Silicon; IV. Theory of the Surface Photovoltage Method in a-Si: H; V. Relation of Measured LD to Lp; VI. Application of Diffusion Length Measurements in a-Si : H; VII. Conclusion.
- I. IntroductionII. Dark Conductivity Changes; III. Reversal of Light-Induced Changes; IV. Photoconductivity Changes; V. Changes in Photovoltaic Properties; VI. Discussion; References; Chapter 11. Schottky Barriers on a-Si : H; I. Introduction; II. Aspects of Schottky Bamers; III. Transport Mechanisms and Measurements; IV. Structural Interactions; V. Barrier on Doped a-Si : H; VI. Schottky-Barrier Origin; VII. Concluding Remarks; References; Chapter 12. Amorphous Semiconductor Superlattices; I. Introduction; II. Film Deposition and Structure; Ill. Optical Absorption; IV. Photoluminescence.