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Hydrogenated amorphous silicon. Part C, Electronic and transport properties /
SEMICONDUCTORS & amp; SEMIMETALS V21C.
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
Orlando, Fla :
Academic Press,
1984.
|
| Colección: | Semiconductors and semimetals ;
v. 21, pt. C. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
MARC
| LEADER | 00000cam a2200000 a 4500 | ||
|---|---|---|---|
| 001 | SCIDIR_ocn298462707 | ||
| 003 | OCoLC | ||
| 005 | 20231117015203.0 | ||
| 006 | m o d | ||
| 007 | cr cnu---unuuu | ||
| 008 | 090115s1984 flua ob 001 0 eng d | ||
| 040 | |a N$T |b eng |e pn |c N$T |d OCLCQ |d IDEBK |d E7B |d OCLCQ |d OPELS |d OCLCQ |d OCLCF |d EBLCP |d OCLCQ |d DEBSZ |d OCLCQ |d MERUC |d OCLCQ |d LEAUB |d OCLCQ |d VLY |d OCLCO |d OCLCQ |d OCLCO | ||
| 019 | |a 646758189 |a 808732753 |a 1162267545 | ||
| 020 | |a 9780080864136 |q (electronic bk.) | ||
| 020 | |a 0080864139 |q (electronic bk.) | ||
| 020 | |a 0127521496 |q (electronic bk.) | ||
| 020 | |a 9780127521497 |q (electronic bk.) | ||
| 020 | |a 1281760277 | ||
| 020 | |a 9781281760272 | ||
| 020 | |a 9786611760274 | ||
| 020 | |a 661176027X | ||
| 035 | |a (OCoLC)298462707 |z (OCoLC)646758189 |z (OCoLC)808732753 |z (OCoLC)1162267545 | ||
| 050 | 4 | |a QC610.9 |b .S48eb vol. 21, pt. C | |
| 072 | 7 | |a SCI |x 021000 |2 bisacsh | |
| 082 | 0 | 4 | |a 537.6/22 |2 22 |
| 245 | 0 | 0 | |a Hydrogenated amorphous silicon. |n Part C, |p Electronic and transport properties / |c volume editor, Jacques I. Pankove. |
| 246 | 3 | 0 | |a Electronic and transport properties |
| 260 | |a Orlando, Fla : |b Academic Press, |c 1984. | ||
| 300 | |a 1 online resource (xiii, 437 pages) : |b illustrations | ||
| 336 | |a text |b txt |2 rdacontent | ||
| 337 | |a computer |b c |2 rdamedia | ||
| 338 | |a online resource |b cr |2 rdacarrier | ||
| 490 | 1 | |a Semiconductors and semimetals ; |v v. 21, pt. C | |
| 504 | |a Includes bibliographical references and index. | ||
| 588 | 0 | |a Print version record. | |
| 505 | 0 | |a Front Cover; Semiconductors and Semimetals; Copyright Page; Contents; List of Contributors; Foreword; Preface; Chapter 1. Introduction; References; Chapter 2. Density of States from Junction Measurements in Hydrogenated Amorphous Silicon; I. Introduction; II. General Considerations; III. Field Effect; IV. Capacitance; V. Deep-Level Transient Spectroscopy; References; Chapter 3. Magnetic Resonance Measurements in a-Si : H; I. Introduction; II. Nuclear Magnetic Resonance; III. Electron Spin Resonance; IV. Summary; References; Chapter 4. Optically Detected Magnetic Resonance; I. Introduction. | |
| 505 | 8 | |a II. Principle of Optically Detected Magnetic ResonanceIII. Experimental Apparatus; IV. Steady State ODMR; V. Light-Induced Effect in ODMR; VI. Nature of the Recombination Centers in a-Si: H; VII. Remark on Recombination Processes; VIII. Time-Resolved ODMR; IX. Temperature Dependence of ODMR; X. ENDOR and Optically Detected ENDOR; XI. Spin-Dependent Photoinduced Absorption; XII. Summary; References; Chapter 5. Carrier Mobility in a-Si : H; I. General Considerations; II. Experimental Method; III. Experimental Results; IV. Concluding Comments; References. | |
| 505 | 8 | |a Chapter 6. Information about Band-Tail States from Time-of-Flight ExperimentsI. Introduction; II. Time-of-Flight Experiment; III. Experimental Results; IV. Transport Model; V. Discussion; VI. Conclusions; Appendix; References; Chapter 7. Diffusion Length in Undoped a-Si : H; I. Introduction; II. Experimental Determination of Lp in Conventional Semiconductors; III. Estimates of Diffusion Length in Amorphous Silicon; IV. Theory of the Surface Photovoltage Method in a-Si: H; V. Relation of Measured LD to Lp; VI. Application of Diffusion Length Measurements in a-Si : H; VII. Conclusion. | |
| 505 | 8 | |a I. IntroductionII. Dark Conductivity Changes; III. Reversal of Light-Induced Changes; IV. Photoconductivity Changes; V. Changes in Photovoltaic Properties; VI. Discussion; References; Chapter 11. Schottky Barriers on a-Si : H; I. Introduction; II. Aspects of Schottky Bamers; III. Transport Mechanisms and Measurements; IV. Structural Interactions; V. Barrier on Doped a-Si : H; VI. Schottky-Barrier Origin; VII. Concluding Remarks; References; Chapter 12. Amorphous Semiconductor Superlattices; I. Introduction; II. Film Deposition and Structure; Ill. Optical Absorption; IV. Photoluminescence. | |
| 520 | |a SEMICONDUCTORS & amp; SEMIMETALS V21C. | ||
| 546 | |a English. | ||
| 650 | 0 | |a Semiconductors. | |
| 650 | 0 | |a Semimetals. | |
| 650 | 0 | |a Silicon. | |
| 650 | 6 | |a Semi-conducteurs. |0 (CaQQLa)201-0318258 | |
| 650 | 6 | |a Semi-m�etaux. |0 (CaQQLa)201-0096003 | |
| 650 | 6 | |a Silicium. |0 (CaQQLa)201-0052755 | |
| 650 | 7 | |a semiconductor. |2 aat |0 (CStmoGRI)aat300015117 | |
| 650 | 7 | |a silicon. |2 aat |0 (CStmoGRI)aat300011769 | |
| 650 | 7 | |a SCIENCE |x Physics |x Electricity. |2 bisacsh | |
| 650 | 7 | |a Semiconductors |2 fast |0 (OCoLC)fst01112198 | |
| 650 | 7 | |a Semimetals |2 fast |0 (OCoLC)fst01112274 | |
| 650 | 7 | |a Silicon |2 fast |0 (OCoLC)fst01118631 | |
| 650 | 7 | |a Semicondutores elementares. |2 larpcal | |
| 700 | 1 | |a Pankove, Jacques I., |d 1922- | |
| 776 | 0 | 8 | |i Print version: |t Hydrogenated amorphous silicon. Part C, Electronic and transport properties. |d Orlando, Fla : Academic Press, 1984 |z 0127521496 |z 9780127521497 |w (OCoLC)17653733 |
| 830 | 0 | |a Semiconductors and semimetals ; |v v. 21, pt. C. | |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/book/9780127521497 |z Texto completo |
| 856 | 4 | 0 | |u https://sciencedirect.uam.elogim.com/science/bookseries/00808784/21/part/PC |z Texto completo |