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Semiconductors for room temperature nuclear detector applications /
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing num...
| Clasificación: | Libro Electrónico |
|---|---|
| Otros Autores: | , |
| Formato: | Electrónico eBook |
| Idioma: | Inglés |
| Publicado: |
San Diego :
Academic Press,
�1995.
|
| Colección: | Semiconductors and semimetals ;
v. 43. |
| Temas: | |
| Acceso en línea: | Texto completo Texto completo |
Tabla de Contenidos:
- Front Cover; Semiconductors for Room Temperature Nuclear Detector Applications; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Introduction and Overview; I. Introduction; II. Semiconductor Nuclear Detectors; III. Applications; IV. Outline of Text; References; Chapter 2. High-Purity Germanium Detectors; I. Introduction; II. Crystal Growth; III. Characterization; IV. Large Volume Detectors; V. Charge Collection; VI. Germanium X-Ray Detectors; VII. Summary; References; Chapter 3. Growth of Mercuric Iodide; I. The Crystal Structure and Phases of Mercuric Iodide.
- II. Physical Properties Relevant to Crystal GrowthIII. Growth of High Purity Mercuric Iodide Crystals; IV. Crystal Perfection; V. Recent Developments; VI. Challenges in Crystal Growth; References; Chapter 4. Electrical Properties of Mercuric Iodide; List of Symbols; I. Introduction; II. Carrier Transport; III. Deep Levels; IV. Photoconductivity; V. Surface Effects; VI. Detector Performance; VII. Conclusions; References; Chapter 5. Optical Properties of Red Mercuric Iodide; I. Introduction; II. Band Structure; III. Experimental Techniques and Measured Values for Optical Constants.
- IV. Study of Processing by Photoluminescence SpectroscopyV. Conclusions; References; Chapter 6. Growth Methods of CdTe Nuclear Detector Materials; I. Introduction; II. Phase Diagram; III. Synthesis and Purification; IV. Growth of Bulk CdTe; V. High Resistivity Materials; VI. Experimental Results and Conclusion; References; Chapter 7. Characterization of CdTe Nuclear Detector Materials; I. Introduction; II. Impurities Analysis; III. Surface Analysis; IV. Electrical and Optical Characterization; V. Discussion and Conclusions; References; Chapter 8. CdTe Nuclear Detectors and Applications.
- I. IntroductionII. Detection Parameters; III. CdTe Detectors; IV. Improvement of Detector Quality; V. Applications of CdTe Detectors; References; Chapter 9. Cd1 -x Znx Te Spectrometers for Gamma and X-Ray Applications; I. Introduction; II. Growth of Cd1-x ZnxTe Crystals; III. Material Properties of Cd1 -x ZnxTe; IV. Defect Characterization and Effects on Device Response; V. Detector Characterization and Effects on Device Response; VI. Imaging Applications; VII. Future Work; References; Chapter 10. Gallium Arsenide Radiation Detectors and Spectrometers; List of Symbols; I. Introduction.
- II. Basic Properties of GaAsIII. General Detector Operation; IV. Epitaxial GaAs Detectors; V. Bulk GaAs Detectors Operated in Quantum Pulse Mode; VI. Bulk GaAs Photoconductive Detectors Operated in Current Mode; VII. Summary; References; Chapter 11. Lead Iodide Crystals and Detectors; I. Introduction; II. Physical Properties; III. Preparation of Lead Iodide Crystals; IV. Radiation Detector Fabrication and Implementation; V. Potential Applications of Lead Iodide; VI. Conclusion; References; Chapter 12. Other Materials: Status and Prospects; I. Introduction; II. Detector Materials.